阶梯掺杂沟道异质结构场效应晶体管的研究

1996 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings Pub Date : 1996-12-08 DOI:10.1109/COMMAD.1996.610120

Wen-Chau Liu, L. Laih, J. Tsai, Jing-Yuh Chen, Wei-Chou Wang, Po-Hung Lin

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引用次数: 6

摘要

制备并演示了两种具有InGaAs阶梯掺杂沟道(SDC)结构的异质结构场效应晶体管(FET)。对于1/spl倍/100 /spl mu/m/sup 2/门控尺寸，最大漏极饱和电流分别为735和675 mA/mm，最大跨导率分别为200和232 mS/mm，栅极击穿电压分别为15 V和12 V，宽栅极电压摆幅分别为3.3和2.6 V，跨导率g/sub /m/大于150 mS/mm。采用一个简单的模型分析了阈值电压V/sub T/的性能，得到了-3.7和-1.8 V的值。这些良好的性能表明，SDCFET在高速、高功率电路应用方面具有良好的潜力。

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Investigation of step-doped channel heterostructure field-effect transistor

Two kinds of heterostructure field-effect transistor (FET) with an InGaAs step-doped-channel (SDC) profile have been fabricated and demonstrated. For the 1/spl times/100 /spl mu/m/sup 2/ gated dimension, the maximum drain saturation currents were 735 and 675 mA/mm, the maximum transconductances 200 and 232 mS/mm, the gate breakdown voltages 15 V and 12 V, and the wide gate voltage swing 3.3 and 2.6 V with transconductance g/sub m/ higher than 150 mS/mm. A simple model is employed to analyze the performance of threshold voltage V/sub T/ and values of -3.7 and -1.8 V are obtained. These good performances show that the SDCFET has a good potential for high-speed, high-power circuit applications.

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1996 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings

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