二维半导体系统在零磁场和量子化磁场下产生太赫兹电磁辐射

1996 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings Pub Date : 1996-12-08 DOI:10.1109/COMMAD.1996.610156

W. Xu, C. Zhang

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引用次数: 1

摘要

我们提出了在零磁场和量子化磁场下，基于AlGaAs/ gaas的二维半导体系统中产生太赫兹(THz)电磁辐射的理论研究。计算了太赫兹黑体辐射和太赫兹回旋加速器辐射强度随光子频率和电子温度的变化规律。我们认为电子被脉冲电场加热，热电子与电磁场的相互作用是由电子-声子散射介导的。

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Electrical generation of terahertz electromagnetic radiations from two-dimensional semiconductor systems at zero and quantizing magnetic fields

We present a theoretical study on the electrical generation of terahertz (THz) electromagnetic radiation in AlGaAs/GaAs-based two-dimensional semiconductor systems at zero and quantizing magnetic fields. The intensity of THz blackbody radiation emission and THz cyclotron emission has been calculated as a function of photon frequency and electron temperature. We consider that the electrons are heated by pulsed electric fields and that the hot-electron interactions with electromagnetic fields are mediated by electron-phonon scattering.

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1996 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings

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