可变到宽禁带材料中态密度的光电测定

1996 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings Pub Date : 1996-12-08 DOI:10.1109/COMMAD.1996.610139

J. Singh

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引用次数: 0

摘要

本文介绍了首次使用光电技术联合测量电场与光场相关的传导。该技术在测定光电密度方面具有简单、完备的特点。举例来说，/spl α /-Si:H:N被认为是可变到宽间隙材料的原型。

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Optoelectronic determination of density of states in variable to wide band-gap materials

Present paper describes first time use of an opto-electronic technique consisting of a joint measurement of electrical and optical field dependent conduction. The technique is noteworthy in its simplicity and completeness for determining the optoelectronic density. For illustration /spl alpha/-Si:H:N is considered as a prototype of a variable to wide gap material.

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1996 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings

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