Al/sub x/Ga/sub (1-x/)As的固相外延:动力学与组成的函数关系

1996 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings Pub Date : 1996-12-08 DOI:10.1109/COMMAD.1996.610090

S. Hogg, D. Llewellyn, H. Tan, M. Ridgway

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引用次数: 0

摘要

本文研究了x=0-0.46的非晶Al/sub x/Ga/sub (1-x/)As合金在220-310/spl℃范围内的固相外延(SPE)。在200 keV下注入/sup 74/Ge离子，对样品进行退火处理。时间分辨反射率(TRR)和卢瑟福后向散射光谱法结合通道(RBS/C)来推断再结晶动力学作为Al含量的函数。残余紊乱用RBS/C和横断面透射电镜(XTEM)进行表征。在所有组分中，固相萃取率均表现出阿累尼乌斯温度依赖性。该过程的活化能(/spl sim/1.60 eV)和指数前值(平均4.0/spl times/10/sup / 15/ /spl Aring//s)随组分的变化不大。在所有成分中，在200-400 /spl / /以上均观察到单晶再生，随后出现孪晶。表明孪晶体积分数的RBS/C最小产率值为/spl / sim/0.90，与Al含量无关。

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Solid-phase epitaxy of Al/sub x/Ga/sub (1-x/)As: kinetics as a function of composition

The solid-phase epitaxy (SPE) of amorphised Al/sub x/Ga/sub (1-x/)As alloys, with x=0-0.46, has been investigated at temperatures over the range 220-310/spl deg/C. Samples were implanted with /sup 74/Ge ions at 200 keV and then annealed. Time resolved reflectivity (TRR) and Rutherford backscattering spectrometry in combination with channeling (RBS/C) were used to deduce the recrystallisation kinetics as a function of Al content. Residual disorder was characterised with RBS/C and cross-sectional transmission electron microscopy (XTEM). The SPE rate exhibited an Arrhenius temperature dependence at all compositions. The activation energy (/spl sim/1.60 eV) and the pre-exponential (on average 4.0/spl times/10/sup 15/ /spl Aring//s) for the process varied little with composition. At all compositions, single crystal regrowth was observed over 200-400 /spl Aring/ followed by the onset of twinning. RBS/C minimum yield values, indicative of the twinned volume fraction, were /spl sim/0.90 independent of Al content.

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1996 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings

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