hemt互调零化分析

1996 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings Pub Date : 1996-12-08 DOI:10.1109/COMMAD.1996.610112

G. Qu, A. Parker

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引用次数: 7

摘要

本文研究了hemt的非线性电流电压特性所产生的互调零化。建立了二维泰勒级数展开系数互调抵消的条件，并通过测量和仿真进行了验证。二阶和三阶互调消除可以通过简单的检查器件的跨导特性来评估。这允许在表征器件后常规选择可选偏置。

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Analysis of intermodulation nulling in HEMTs

This paper examines intermodulation nulling generated by the nonlinear current voltage characteristics of HEMTs. The conditions for intermodulation cancellation in terms of the coefficients of a two-dimensional Taylor's series expansion are established and verified with measurement and simulation. Second and third-order intermodulation cancellation can be assessed by simple examination of the transconductance characteristics of the device. This permits routine selection of optional bias after characterising the devices.

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1996 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings

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