LT MBE GaAs在太赫兹频率下的光混合特性

1996 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings Pub Date : 1996-12-08 DOI:10.1109/COMMAD.1996.610072

P. Kordos, F. Ruders, M. Marso, A. Forster

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引用次数: 4

摘要

低温生长的MBE GaAs层，生长和退火(T/sub g/=200-420/spl℃，T/sub a/=600/spl℃)的性能与光合成性能的关系进行了评价。在所有退火层中，光载流子寿命/spl tau//sub e-h/= 0.20-0.25 ps。测量了MSM结构的微波电容，从/spl tau//sub e-h/和/spl tau//sub RC/评估得到460 GHz的RC限制带宽。随着生长温度的升高，生长层和退火层中的载流子迁移率从/spl μ //sub H//spl les/1 cm/sup 2//V /s增加到SI GaAs体积值。当温度在200-250/spl℃时，退火层的击穿场为/spl长/280 kV/cm，当温度升高到420/spl℃时，击穿场减小到/spl长/40 kV/cm。因此，可以优化光电混合器的转换效率/spl epsiv//sub /。

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Properties of LT MBE GaAs for photomixing up to THz frequencies

The properties of low-temperature-grown MBE GaAs layers, as-grown and annealed (T/sub g/=200-420/spl deg/C, T/sub a/=600/spl deg/C), are evaluated in relation to the performance of a photomixer. In all annealed layers the photocarrier life time /spl tau//sub e-h/= 0.20-0.25 ps is found. Microwave capacitance of MSM structures is measured and RC-limited bandwidth of 460 GHz follows from /spl tau//sub e-h/ and /spl tau//sub RC/ evaluation. The carrier mobility in as-grown and annealed layers increases from /spl mu//sub H//spl les/1 cm/sup 2//V s to SI GaAs bulk values with increase in the growth temperature. The breakdown field in annealed layers is /spl cong/280 kV/cm if grown at 200-250/spl deg/C and decreases to /spl cong/40 kV/cm if T/sub g/ increases to 420/spl deg/C. Thus, photomixer conversion efficiency /spl epsiv//sub r/ can be optimized.

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来源期刊

1996 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings

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