The application of OIM and EBIC techniques to the characterization of polycrystalline silicon films

The orientation imaging microscopy (OIM) has been routinely used to characterize pc-Si thin film materials for photovoltaic applications. This technique has also been used jointly with electron beam induced current (EBIC) technique to study the relations of grain boundary structure and their recombination strengths. In this paper the technique is described and examples have been given. Evidence has been presented that the /spl Sigma/3 grain boundaries can be strong recombination centres depending on the grain boundary planes. Existing results in the literature need to be re-examined.