采用脉冲阳极氧化和快速热退火技术制备具有侧壁量子阱的v槽GaAs/AlGaAs量子线

1996 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings Pub Date : 1996-12-08 DOI:10.1109/COMMAD.1996.610106

Y. Kim, S. Yuan, R. Leon, A. Clark, C. Jagadish, M. Johnston, P. Burke, M. Gal, J. Zou, D. Cockayne, M. Phillips, M. A. Kalceff

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引用次数: 0

摘要

采用脉冲阳极氧化和随后的快速热退火这一新型无杂质互扩散技术，研究了金属有机化学气相沉积在v型凹槽GaAs衬底上生长的GaAs/AlGaAs多量子线。研究了砷化镓量子线的光致发光(PL)和阴极发光(CL)发射。IFID增加了量子线中的载流子约束和从侧壁量子阱到量子线的多余载流子转移的效率，其中多余载流子是通过光泵浦(PL)或电子泵浦(CL)产生的。

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V-grooved GaAs/AlGaAs quantum wires with side wall quantum wells intermixed by pulsed anodization and rapid thermal annealing

A novel impurity-free interdiffusion (IFID) technique, namely, pulsed anodization and subsequent rapid thermal annealing, is applied to study GaAs/AlGaAs multiple quantum wires grown by metalorganic chemical vapour deposition on V-grooved GaAs substrates. Photoluminescence (PL) and cathodoluminescence (CL) emissions are observed from GaAs quantum wires. IFID increases both carrier confinement in quantum wires and the efficiency of excess carrier transfer from sidewall quantum wells to quantum wires, where the excess carriers are generated either by optical pumping (PL) or electron pumping (CL).

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1996 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings

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