发布求助
文献互助 智能选刊 最新文献

Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198)最新文献

筛选
英文 中文
Ammonia (NH/sub 3/) plasma surface passivation of InP/InGaAs heterojunction bipolar transistors 氨(NH/sub 3/)等离子体表面钝化InP/InGaAs异质结双极晶体管
Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198) Pub Date : 2001-05-14 DOI: 10.1109/ICIPRM.2001.929148
Hong Wang, G. Ng, Hong Yang, K. Radhakrishnan
{"title":"Ammonia (NH/sub 3/) plasma surface passivation of InP/InGaAs heterojunction bipolar transistors","authors":"Hong Wang, G. Ng, Hong Yang, K. Radhakrishnan","doi":"10.1109/ICIPRM.2001.929148","DOIUrl":"https://doi.org/10.1109/ICIPRM.2001.929148","url":null,"abstract":"In this study, we report on the experimental results of ammonia (NH/sub 3/) plasma surface passivation of InP/InGaAs HBT's. The NH/sub 3/ plasma treatment is found to reduce the surface recombination and thus improve the current gain. The passivation mechanism is believed to be similar to that of H and N plasma treatment for GaAs HBT's.","PeriodicalId":403484,"journal":{"name":"Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198)","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127175564","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
InGaP/GaAs DHBTs with composite collectors for power amplifiers 功率放大器用带复合集热器的InGaP/GaAs dhbt
Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198) Pub Date : 2001-05-14 DOI: 10.1109/ICIPRM.2001.929094
Y. Hsin, Chih-Hsien Lin, C. Fan, Shih-Tzung Su, M.H.T. Yang, J.C. Huang, K. Lin
{"title":"InGaP/GaAs DHBTs with composite collectors for power amplifiers","authors":"Y. Hsin, Chih-Hsien Lin, C. Fan, Shih-Tzung Su, M.H.T. Yang, J.C. Huang, K. Lin","doi":"10.1109/ICIPRM.2001.929094","DOIUrl":"https://doi.org/10.1109/ICIPRM.2001.929094","url":null,"abstract":"InGaP/GaAs double heterojunction bipolar transistors (DHBTs) with composite collectors have been proposed, simulated and fabricated for power amplifier applications in wireless communication. The composite collector combines wide-bandgap (InGaP) and narrow-bandgap (GaAs) materials. InGaP provides a high breakdown field and thus can be employed to reduce collector thickness while maintaining breakdown voltage. GaAs provides high electron mobility and thus is able to be used to reduce on-resistance and transit time. Three InGaP/GaAs HBTs with different collector structures have been grown, fabricated and characterized. The Gummel plots from simulation and measurement for the proposed DHBT show negligible difference in current gains, which is due to the identical structures in base/emitter regions and effectively reduced conduction spike in the base-collector junction. Overall, this DHBT with displays improved performance in on-resistance and knee voltage.","PeriodicalId":403484,"journal":{"name":"Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198)","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127339058","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Gas source MBE growth of TlInGaAs layers on GaAs substrates GaAs衬底上TlInGaAs层的气源MBE生长
Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198) Pub Date : 2001-05-14 DOI: 10.1109/ICIPRM.2001.929129
H. Lee, A. Mizobata, O. Maeda, K. Konishi, K. Asami, H. Asahi
{"title":"Gas source MBE growth of TlInGaAs layers on GaAs substrates","authors":"H. Lee, A. Mizobata, O. Maeda, K. Konishi, K. Asami, H. Asahi","doi":"10.1109/ICIPRM.2001.929129","DOIUrl":"https://doi.org/10.1109/ICIPRM.2001.929129","url":null,"abstract":"New alloy semiconductor heterostructures TlInGaAsN/AlGaAs are proposed to fabricate 1.3-1.55 /spl mu/m wavelength laser diodes with temperature-stable threshold currents and temperature-stable lasing wavelengths. TlInGaAs/GaAs and InGaAs/GaAs double-hetero (DH) and multi-hetero (HD) structures were grown on GaAs substrates by gas source molecular-beam epitaxy (MBE). Incorporation of Tl into TlInGaAs was confirmed up to 9% with reflection high energy electron diffraction (RHEED) intensity oscillation. Red shift of the photoluminescence (PL) peak energy was also observed for TlInGaAs/GaAs DW and MH samples, which agrees with the incorporation of Tl.","PeriodicalId":403484,"journal":{"name":"Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130182918","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Optical gain in InGaAs/GaAs self-assembled quantum dots and its effect on optical devices InGaAs/GaAs自组装量子点的光学增益及其对光学器件的影响
Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198) Pub Date : 2001-05-14 DOI: 10.1109/ICIPRM.2001.929132
M. Sugawara, N. Hatori, Tomoyuki Akiyama, Y. Nakata
{"title":"Optical gain in InGaAs/GaAs self-assembled quantum dots and its effect on optical devices","authors":"M. Sugawara, N. Hatori, Tomoyuki Akiyama, Y. Nakata","doi":"10.1109/ICIPRM.2001.929132","DOIUrl":"https://doi.org/10.1109/ICIPRM.2001.929132","url":null,"abstract":"This paper presents theoretical and experimental studies on the optical gain of self-assembled InGaAs/GaAs quantum dots: homogeneous broadening of single-dot optical gain and its effect on lasing spectra, the magnitude of gain as a function of current, ultrafast gain recovery, and a comprehensive theory. Based on the results, we developed an operation theory of traveling-type quantum-dot semiconductor optical amplifiers to demonstrate that they can process high-bit-rate multiple-wavelength optical signals over 40 Gbit/s under gain saturation. This promises diverse optical functional devices, which meet with the demand of next-generation broadband all-optical photonic networks.","PeriodicalId":403484,"journal":{"name":"Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198)","volume":"135 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132860434","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
High reliability of 0.1 /spl mu/m InGaAs/InAlAs/InP HEMT MMICs on 3-inch InP substrates 在3英寸InP衬底上实现0.1 /spl μ m InGaAs/InAlAs/InP HEMT mmic的高可靠性
Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198) Pub Date : 2001-05-14 DOI: 10.1109/ICIPRM.2001.929231
Y. Chou, D. Leung, J. Scarpulla, R. Lai, M. Barsky, R. Grundbacher, M. Nishimoto, P. Liu, D. Streit
{"title":"High reliability of 0.1 /spl mu/m InGaAs/InAlAs/InP HEMT MMICs on 3-inch InP substrates","authors":"Y. Chou, D. Leung, J. Scarpulla, R. Lai, M. Barsky, R. Grundbacher, M. Nishimoto, P. Liu, D. Streit","doi":"10.1109/ICIPRM.2001.929231","DOIUrl":"https://doi.org/10.1109/ICIPRM.2001.929231","url":null,"abstract":"The high-reliability performance of K-band MMIC amplifiers fabricated with 0.1 /spl mu/m gate length InGaAs/InAlAs/InP HEMTs on 3-inch wafers using a high volume production process technology is reported. Operating at an accelerated life test condition of Vds=1.5 V and Ids=150 mA/mm, two-stage balanced amplifiers were life tested at two-temperatures (T/sub 1/=230/spl deg/C, and T/sub 2/=250/spl deg/C) in nitrogen ambient. The activation energy (Ea) is as high as 1.5 eV, achieving a projected median-time-to-failure (MTF)>1/spl times/10/sup 6/ hours at a 125/spl deg/C junction temperature. MTF was determined by 2T constant current stress using |/spl Delta/S21|>1.0 dB as the failure criteria. This is the first report of high reliability 0.1 /spl mu/m InGaAs/InAlAs/InP HEMT MMICs based on small-signal microwave characteristics. This result demonstrates a reliable InGaAs/InAlAs/InP HEMT production technology.","PeriodicalId":403484,"journal":{"name":"Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198)","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130258868","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Nonlinearity and response speed evaluation of intersubband transition in InGaAs/AlAsSb quantum well InGaAs/AlAsSb量子阱子带间跃迁非线性及响应速度评价
Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198) Pub Date : 2001-05-14 DOI: 10.1109/ICIPRM.2001.929031
A. Gopal, H. Yoshida, T. Akiyama, A. Neogi, T. Mozume, N. Georgiev, O. Wada
{"title":"Nonlinearity and response speed evaluation of intersubband transition in InGaAs/AlAsSb quantum well","authors":"A. Gopal, H. Yoshida, T. Akiyama, A. Neogi, T. Mozume, N. Georgiev, O. Wada","doi":"10.1109/ICIPRM.2001.929031","DOIUrl":"https://doi.org/10.1109/ICIPRM.2001.929031","url":null,"abstract":"We report the first reliable estimate of the saturation intensity in InGaAs/AlAsSb quantum wells using the homogeneous linewidth estimated from a careful lineshape analysis of the absorption spectra recorded as a function of temperature and the pump-probe relaxation time (/spl tau//spl ap/2.1 psec) at room temperature. The estimated value of saturation intensity is 52/spl plusmn/5 MW cm/sup 2/ at an excitation wavelength of 1.92 /spl mu/m. We performed a direct saturation measurement to estimate the linear absorption coefficient (/spl alpha//sub 0/) and the 3rd order susceptibility (/spl chi//sup (3)/). We observed a giant /spl chi//sup (3)/ of about 8.2/spl times/10/sup -15/ m/sup 2//V/sup 2/. The linear absorption coefficient is evaluated to be 3370 cm/sup -1/. From these values we estimated the figure of merit to be 1.2/spl times/10/sup -8/ m/sup 3/ V/sup -2/s/sup -1/ in this material.","PeriodicalId":403484,"journal":{"name":"Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198)","volume":"145 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121398942","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Understanding the degradation of InP/InGaAs heterojunction bipolar transistors induced by silicon nitride passivation 氮化硅钝化诱导InP/InGaAs异质结双极晶体管退化的研究
Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198) Pub Date : 2001-05-14 DOI: 10.1109/ICIPRM.2001.929105
Hong Wang, G. Ng, Hong Yang, K. Radhakrishnan
{"title":"Understanding the degradation of InP/InGaAs heterojunction bipolar transistors induced by silicon nitride passivation","authors":"Hong Wang, G. Ng, Hong Yang, K. Radhakrishnan","doi":"10.1109/ICIPRM.2001.929105","DOIUrl":"https://doi.org/10.1109/ICIPRM.2001.929105","url":null,"abstract":"The effect of SiN passivation on the electrical characteristics of InP/InGaAs HBT's has been investigated comprehensively. The major degradations of I-V characteristics identified in our InP/InGaAs HBT's are: (1) the decrease of current gain due to a significant increase in the forward base leakage current and (2) large increase of base-collector (B-C) and base-emitter (B-E) reverse leakage currents. We found that different physical origins should be attributed to these two degradation behaviors.","PeriodicalId":403484,"journal":{"name":"Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198)","volume":"239 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122985958","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 8
Physical model and characteristics of quantum dot infrared photodetectors 量子点红外探测器的物理模型与特性
Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198) Pub Date : 2001-05-14 DOI: 10.1109/ICIPRM.2001.929138
V. Ryzhii, I. Khmyrova, V. Pipa, M. Ryzhii, V. Mitin, M. Willander
{"title":"Physical model and characteristics of quantum dot infrared photodetectors","authors":"V. Ryzhii, I. Khmyrova, V. Pipa, M. Ryzhii, V. Mitin, M. Willander","doi":"10.1109/ICIPRM.2001.929138","DOIUrl":"https://doi.org/10.1109/ICIPRM.2001.929138","url":null,"abstract":"We develop a physical model for quantum dot infrared photodetectors (QDIPs). Using this model, we calculate the dark current and photocurrent in QDIPs as functions of the QDIP structural parameters and the applied voltage. The obtained results clarify some interesting features of the QDIP characteristics observed experimentally, in particular, a rather steep (exponential) rise of the dark current and photocurrent with increasing applied voltage and the occurrence of negative differential photoconductivity.","PeriodicalId":403484,"journal":{"name":"Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198)","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123037086","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Device performance and transport properties of high gain metamorphic InP/InGaAs heterojunction bipolar transistors at elevated temperature 高温下高增益变质InP/InGaAs异质结双极晶体管的器件性能和输运特性
Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198) Pub Date : 2001-05-14 DOI: 10.1109/ICIPRM.2001.929092
Hong Yang, Hong Wang, G. Ng, Haiqun Zheng, K. Radhakrishnan
{"title":"Device performance and transport properties of high gain metamorphic InP/InGaAs heterojunction bipolar transistors at elevated temperature","authors":"Hong Yang, Hong Wang, G. Ng, Haiqun Zheng, K. Radhakrishnan","doi":"10.1109/ICIPRM.2001.929092","DOIUrl":"https://doi.org/10.1109/ICIPRM.2001.929092","url":null,"abstract":"A detailed DC characterization of metamorphic InP/InGaAs/InP DHBT's in the temperature range of 300 K to 400 K was carried out and the carrier transport properties were investigated. Our experiments reveal that band-to-band recombination is the dominant mechanism for the base current indicating the good base material quality for the metamorphic HBT structures.","PeriodicalId":403484,"journal":{"name":"Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198)","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127563016","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Study of GaAs[001] surface with adsorbed oxygen 氧吸附GaAs[001]表面的研究
Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198) Pub Date : 2001-05-14 DOI: 10.1109/ICIPRM.2001.929122
Y. Kasai, Y. Yamamura, T. Inokuma, K. Iiyama, S. Takamiya
{"title":"Study of GaAs[001] surface with adsorbed oxygen","authors":"Y. Kasai, Y. Yamamura, T. Inokuma, K. Iiyama, S. Takamiya","doi":"10.1109/ICIPRM.2001.929122","DOIUrl":"https://doi.org/10.1109/ICIPRM.2001.929122","url":null,"abstract":"The authors have investigated the effect of pretreatment by pH-controlled chemicals on Schottky barrier heights of Ni/n-GaAs junctions. An X-ray photoelectron spectroscopy (XPS) analysis of the treated surface suggested that difference in surface oxygen densities is the cause of the different electrical characteristics. In order to comprehend it’s mechanism, electronic state of GaAs(001) surfaces with and without adsorbed oxygen atoms were studied ,using first-principle calculation and compared with experimental results of Ni/n-GaAs(OOl) Schottky junctions.","PeriodicalId":403484,"journal":{"name":"Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198)","volume":"92 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122532817","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
首页 上一页 下一页 尾页
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整，为了账户安全，请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
请完成安全验证×
相关产品
×
本文献相关产品
联系我们：info@booksci.cn Book学术提供免费学术资源搜索服务，方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号：481959085
Book学术官方微信