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Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198)最新文献

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Carrier dynamics in quantum dots and their application to lasers and microcavity light emitters 量子点的载流子动力学及其在激光器和微腔光源中的应用
Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198) Pub Date : 2001-05-14 DOI: 10.1109/ICIPRM.2001.929023
D. Deppe, C. Cao, O. Shchekin, Z. Zou, H. Chen, T. Boggess, L. Zhang, K. Gundogdu
{"title":"Carrier dynamics in quantum dots and their application to lasers and microcavity light emitters","authors":"D. Deppe, C. Cao, O. Shchekin, Z. Zou, H. Chen, T. Boggess, L. Zhang, K. Gundogdu","doi":"10.1109/ICIPRM.2001.929023","DOIUrl":"https://doi.org/10.1109/ICIPRM.2001.929023","url":null,"abstract":"In this paper we discuss recent experiments performed to characterize the energy relaxation of charge carriers in self-organized QDs. We find several interesting phenomena in these QDs, including a QD size dependence in the relaxation time. While large InGaAs QDs with closely spaced energy levels show relaxation times from the QD wetting layer to the 0-dimensional ground state of /spl sim/1 ps, smaller InAs QDs with more widely spaced energy levels show relaxation times of /spl sim/7 ps. In addition, an interesting pump dependence exists for the relaxation time (as measured by the radiative emission) for the first excited radiative transition to the ground state transition.","PeriodicalId":403484,"journal":{"name":"Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198)","volume":"91 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132263319","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Negative differential resistance in trench-type narrow InGaAs quantum wire 沟槽型窄InGaAs量子线的负差分电阻
Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198) Pub Date : 2001-05-14 DOI: 10.1109/ICIPRM.2001.929195
K. Jang, T. Sugaya, K. Matsumo, T. Shimizu, M. Ogura, Y. Sugiyama
{"title":"Negative differential resistance in trench-type narrow InGaAs quantum wire","authors":"K. Jang, T. Sugaya, K. Matsumo, T. Shimizu, M. Ogura, Y. Sugiyama","doi":"10.1109/ICIPRM.2001.929195","DOIUrl":"https://doi.org/10.1109/ICIPRM.2001.929195","url":null,"abstract":"A trench-type narrow InGaAs quantum-wire field-effect transistor (QWRFET) on a V-grooved (311)A InP substrate has been successfully fabricated. The trench-type InGaAs QWR-FET with 50 nm gate-length has demonstrated clear negative differential resistance (NDR) characteristics based on real space transfer (RST) with a high peak-to-valley current ratio (PVR=6.2) and a low onset voltage (V/sub NDR/) of 0.1 V. Such a low V/sub NDR/ has not been reported before.","PeriodicalId":403484,"journal":{"name":"Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198)","volume":"280 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133479467","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Isolation degradation of InAlAs/InGaAs/InP HEMTs due to bias stress depending on passivation films formed by PCVD 偏置应力对InAlAs/InGaAs/InP hemt分离降解的影响取决于PCVD形成的钝化膜
Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198) Pub Date : 2001-05-14 DOI: 10.1109/ICIPRM.2001.929147
H. Moriguchi, S. Hoshi, T. Ohshima, T. Izumi, M. Tsunotani, T. Kimura
{"title":"Isolation degradation of InAlAs/InGaAs/InP HEMTs due to bias stress depending on passivation films formed by PCVD","authors":"H. Moriguchi, S. Hoshi, T. Ohshima, T. Izumi, M. Tsunotani, T. Kimura","doi":"10.1109/ICIPRM.2001.929147","DOIUrl":"https://doi.org/10.1109/ICIPRM.2001.929147","url":null,"abstract":"We have observed the degradation of pinch-off characteristics of InAlAs/InGaAs high electron mobility transistors (HEMTs) with SiN passivation film after the bias stress test, which has been resulted from an increase of leakage current on InP surface. On the other hand, the device passivated by SiO/sub 2/ film does not show any degradation. The stability of the isolation characteristic for InP is strongly affected by the surface passivation film formed by plasma-enhanced chemical vapor deposition (PCVD). In order to improve the device reliability, SiO/sub 2/ is more suitable than SiN for a stable passivation to InP surface.","PeriodicalId":403484,"journal":{"name":"Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198)","volume":"53 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133057966","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Effect of phosphine plasma treatment on protection from Si passivation in AlInAs/InGaAs HEMT due to F atoms 磷化氢等离子体处理对AlInAs/InGaAs HEMT中F原子致Si钝化的保护作用
Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198) Pub Date : 2001-05-14 DOI: 10.1109/ICIPRM.2001.929104
K. Yamamoto, N. Fujita, S. Nakajima, T. Sugino
{"title":"Effect of phosphine plasma treatment on protection from Si passivation in AlInAs/InGaAs HEMT due to F atoms","authors":"K. Yamamoto, N. Fujita, S. Nakajima, T. Sugino","doi":"10.1109/ICIPRM.2001.929104","DOIUrl":"https://doi.org/10.1109/ICIPRM.2001.929104","url":null,"abstract":"A process technology to suppress diffusing fluorine (F) atoms into the AlInAs layer at elevated temperature is investigated using AlInAs/InGaAs HEMT wafers grown on InP substrates. Removal of F atoms adsorbed on the AlInAs surface and formation of a barrier layer to suppress F diffusion are attempted by a plasma process. It is demonstrated by SIMS measurements that diffusion of F atoms is suppressed even after annealing at 400/spl deg/C for the AlInAs layer treated successively with phosphine plasma at room temperature and 250/spl deg/C. Hall measurements also reveal that a reduction in the two dimensional electron gas density is suppressed.","PeriodicalId":403484,"journal":{"name":"Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198)","volume":"34 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123941448","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
MBE growth of large diameter InP-based lattice-matched and metamorphic HBTs 大直径inp基晶格匹配和变质HBTs的MBE生长
Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198) Pub Date : 2001-05-14 DOI: 10.1109/ICIPRM.2001.929113
W.K. Liu, D. Lubyshev, Y. Wu, X. Fang, T. Yurasits, A. Cornfeld, D. Mensa, S. Jaganathan, R. Pullela, M. Dahlstrom, P. Sundararajan, T. Mathew, M. Rodwell
{"title":"MBE growth of large diameter InP-based lattice-matched and metamorphic HBTs","authors":"W.K. Liu, D. Lubyshev, Y. Wu, X. Fang, T. Yurasits, A. Cornfeld, D. Mensa, S. Jaganathan, R. Pullela, M. Dahlstrom, P. Sundararajan, T. Mathew, M. Rodwell","doi":"10.1109/ICIPRM.2001.929113","DOIUrl":"https://doi.org/10.1109/ICIPRM.2001.929113","url":null,"abstract":"InAlAs/InGaAs/InP heterojunction bipolar transistor (HBT) structures were grown lattice-matched on InP substrates and metamorphically on GaAs substrates by molecular beam epitaxy. Generic structures with a thin base of 500 /spl Aring/ and doped at 4/spl times/10/sup 19/ cm/sup -3/ were chosen to support the frequency response required for advanced wireless and fiber-optic telecommunication products. Beryllium- and carbon-doped large-area devices were found to exhibit similar DC characteristics. No significant difference in current gain or linearity was observed for metamorphic devices compared to their lattice-matched counterparts.","PeriodicalId":403484,"journal":{"name":"Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198)","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124418707","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Influence of hole accumulation on the source resistance, kink effect, and on-state breakdown of InP-based HEMTs: light irradiation study 空穴积累对inp基hemt源电阻、扭结效应和导态击穿的影响:光辐照研究
Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198) Pub Date : 2001-05-14 DOI: 10.1109/ICIPRM.2001.929173
T. Suemitsu, H. Fushimi, S. Kodama, S. Tsunashima, S. Kimura
{"title":"Influence of hole accumulation on the source resistance, kink effect, and on-state breakdown of InP-based HEMTs: light irradiation study","authors":"T. Suemitsu, H. Fushimi, S. Kodama, S. Tsunashima, S. Kimura","doi":"10.1109/ICIPRM.2001.929173","DOIUrl":"https://doi.org/10.1109/ICIPRM.2001.929173","url":null,"abstract":"The influence of impact-ionized holes accumulating in the device was studied for InP-based InAlAs/InGaAs HEMTs using light irradiation experiments. Two parasitic phenomena arise from the generation of electron-hole pairs and subsequent accumulation of holes in the body of the device: The hole accumulation in the source region causes the decrease in the source resistance, which eliminates the kink effect. The hole accumulation in the gate region shifts the threshold voltage. This could be a positive feedback that increases the drain current at the on-state breakdown of the device.","PeriodicalId":403484,"journal":{"name":"Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198)","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116020863","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Photoluminescence dependence on heterointerface for MOCVD grown GaInNAs/GaAs QWs MOCVD生长GaInNAs/GaAs量子阱的异质界面光致发光依赖性
Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198) Pub Date : 2001-05-14 DOI: 10.1109/ICIPRM.2001.929210
M. Kawaguchi, T. Miyamoto, E. Gouardes, T. Kondo, F. Koyama, K. Iga
{"title":"Photoluminescence dependence on heterointerface for MOCVD grown GaInNAs/GaAs QWs","authors":"M. Kawaguchi, T. Miyamoto, E. Gouardes, T. Kondo, F. Koyama, K. Iga","doi":"10.1109/ICIPRM.2001.929210","DOIUrl":"https://doi.org/10.1109/ICIPRM.2001.929210","url":null,"abstract":"We investigated the effect of the gas flow sequence of dimethylhydrazine (DMHy) at heterointerfaces on the optical quality of GaInNAs/GaAs grown by metalorganic chemical vapor deposition (MOCVD). We point out that the photoluminescence (PL) degradation of GaInNAs grown by MOCVD can be categorized into two types. One is the formation of a GaNAs layer at the interface which causes both an unexpected wavelength extension and degradation of crystal quality. Another is introduction of non-radiative centers by N incorporation itself. To overcome these degradation mechanisms, the insertion of GaInAs to the GaInNAs/GaAs heterointerface is proposed. A GaInAs intermediate layer (IML) suppresses GaNAs formation and improve the optical quality of GaInNAs QWs.","PeriodicalId":403484,"journal":{"name":"Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198)","volume":"66 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116419756","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Growth of low EPD InP crystals 低EPD InP晶体的生长
Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198) Pub Date : 2001-05-14 DOI: 10.1109/ICIPRM.2001.929200
R. Hirano, A. Noda
{"title":"Growth of low EPD InP crystals","authors":"R. Hirano, A. Noda","doi":"10.1109/ICIPRM.2001.929200","DOIUrl":"https://doi.org/10.1109/ICIPRM.2001.929200","url":null,"abstract":"Dislocation free (DF) (EPD<500/cm/sup 2/) S doped InP crystals have been grown by modified LEC method. 2-inch diameter InP crystals were grown by thermal baffle technology and 3-inch diameter crystals were grown by phosphorus vapor controlled LEC method (PC-LEC). The DF crystals become somewhat rectangular in shape and the faceting on the cylindrical part of the ingots takes place during the growth. To grow the single crystals with low EPD, it needs to use the stoichiometric polycrystals.","PeriodicalId":403484,"journal":{"name":"Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198)","volume":"10 1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123748657","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Novel RTA technique for large diameter GaAs wafers managing to minimize both dopant diffusion and slip formation 用于大直径砷化镓晶圆的新型RTA技术，可最大限度地减少掺杂扩散和滑移形成
Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198) Pub Date : 2001-05-14 DOI: 10.1109/ICIPRM.2001.929149
T. Sakurada, M. Kiyama, S. Nakajima, M. Tatsumi
{"title":"Novel RTA technique for large diameter GaAs wafers managing to minimize both dopant diffusion and slip formation","authors":"T. Sakurada, M. Kiyama, S. Nakajima, M. Tatsumi","doi":"10.1109/ICIPRM.2001.929149","DOIUrl":"https://doi.org/10.1109/ICIPRM.2001.929149","url":null,"abstract":"Rapid thermal annealing (RTA) is useful for shallow channel device fabrication because of suppression of dopant diffusion. However, short RTA sequence easily causes slip formation due to thermal stress during the process, which is more serious in the case of larger diameter wafers. We investigated at what point slip generated during RTA by monitoring temperature distribution within a wafer and successfully suppress slip formation by introducing a waiting step in the cooling process while maintaining the high cooling rate and the abrupt doping profile.","PeriodicalId":403484,"journal":{"name":"Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198)","volume":"51 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128343934","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
GaInAsN based lasers for the 1.3 and 1.5 /spl mu/m wavelength range 基于GaInAsN的激光器，波长范围为1.3和1.5 /spl mu/m
Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198) Pub Date : 2001-05-14 DOI: 10.1109/ICIPRM.2001.929028
M. Fischer, D. Gollub, M. Reinhardt, A. Forchel
{"title":"GaInAsN based lasers for the 1.3 and 1.5 /spl mu/m wavelength range","authors":"M. Fischer, D. Gollub, M. Reinhardt, A. Forchel","doi":"10.1109/ICIPRM.2001.929028","DOIUrl":"https://doi.org/10.1109/ICIPRM.2001.929028","url":null,"abstract":"Since the introduction of the GaAs based material system GaInAsN for long wavelength laser diodes several years ago, rapid progress has been made in improving the performance of these devices. We present some of our efforts and results in the optimized growth of GaInAsN/GaAs quantum well structures in the 1.3-1.55 /spl mu/m wavelength region by solid source MBE using an RF plasma source for the generation of active nitrogen. Based on this preliminary work, we have fabricated GaInAsN LDs with emission wavelengths up to >1.5 /spl mu/m. Laser performance data for 1.3 and 1.5 /spl mu/m devices are presented and compared.","PeriodicalId":403484,"journal":{"name":"Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198)","volume":"103 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124622488","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
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