基于GaInAsN的激光器，波长范围为1.3和1.5 /spl mu/m

Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198) Pub Date : 2001-05-14 DOI:10.1109/ICIPRM.2001.929028

M. Fischer, D. Gollub, M. Reinhardt, A. Forchel

{"title":"基于GaInAsN的激光器，波长范围为1.3和1.5 /spl mu/m","authors":"M. Fischer, D. Gollub, M. Reinhardt, A. Forchel","doi":"10.1109/ICIPRM.2001.929028","DOIUrl":null,"url":null,"abstract":"Since the introduction of the GaAs based material system GaInAsN for long wavelength laser diodes several years ago, rapid progress has been made in improving the performance of these devices. We present some of our efforts and results in the optimized growth of GaInAsN/GaAs quantum well structures in the 1.3-1.55 /spl mu/m wavelength region by solid source MBE using an RF plasma source for the generation of active nitrogen. Based on this preliminary work, we have fabricated GaInAsN LDs with emission wavelengths up to >1.5 /spl mu/m. Laser performance data for 1.3 and 1.5 /spl mu/m devices are presented and compared.","PeriodicalId":403484,"journal":{"name":"Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198)","volume":"103 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2001-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"GaInAsN based lasers for the 1.3 and 1.5 /spl mu/m wavelength range\",\"authors\":\"M. Fischer, D. Gollub, M. Reinhardt, A. Forchel\",\"doi\":\"10.1109/ICIPRM.2001.929028\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Since the introduction of the GaAs based material system GaInAsN for long wavelength laser diodes several years ago, rapid progress has been made in improving the performance of these devices. We present some of our efforts and results in the optimized growth of GaInAsN/GaAs quantum well structures in the 1.3-1.55 /spl mu/m wavelength region by solid source MBE using an RF plasma source for the generation of active nitrogen. Based on this preliminary work, we have fabricated GaInAsN LDs with emission wavelengths up to >1.5 /spl mu/m. Laser performance data for 1.3 and 1.5 /spl mu/m devices are presented and compared.\",\"PeriodicalId\":403484,\"journal\":{\"name\":\"Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198)\",\"volume\":\"103 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2001-05-14\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICIPRM.2001.929028\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIPRM.2001.929028","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 2

摘要

自几年前引入用于长波激光二极管的GaAs基材料系统GaInAsN以来，在提高这些器件的性能方面取得了快速进展。本文介绍了利用射频等离子体源在1.3-1.55 /spl mu/m波长范围内优化生长GaInAsN/GaAs量子阱结构的一些努力和结果。在此基础上，我们制作了发射波长>1.5 /spl mu/m的GaInAsN ld。给出了1.3和1.5 /spl mu/m器件的激光性能数据并进行了比较。

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GaInAsN based lasers for the 1.3 and 1.5 /spl mu/m wavelength range

Since the introduction of the GaAs based material system GaInAsN for long wavelength laser diodes several years ago, rapid progress has been made in improving the performance of these devices. We present some of our efforts and results in the optimized growth of GaInAsN/GaAs quantum well structures in the 1.3-1.55 /spl mu/m wavelength region by solid source MBE using an RF plasma source for the generation of active nitrogen. Based on this preliminary work, we have fabricated GaInAsN LDs with emission wavelengths up to >1.5 /spl mu/m. Laser performance data for 1.3 and 1.5 /spl mu/m devices are presented and compared.

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Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198)

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