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Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198)最新文献

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Fundamental evaluation of semiconductor waveguide-type in-line wavelength selective filter with Fabry-Perot etalon resonator 基于法布里-珀罗标准子谐振腔的半导体波导型直列波长选择滤波器的基本评价
Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198) Pub Date : 2001-06-29 DOI: 10.1109/ICIPRM.2001.929084
M. Otaka, S. Takahashi, K. Utaka, M. Horita, T. Yazaki
{"title":"Fundamental evaluation of semiconductor waveguide-type in-line wavelength selective filter with Fabry-Perot etalon resonator","authors":"M. Otaka, S. Takahashi, K. Utaka, M. Horita, T. Yazaki","doi":"10.1109/ICIPRM.2001.929084","DOIUrl":"https://doi.org/10.1109/ICIPRM.2001.929084","url":null,"abstract":"As compact filtering devices easily integrated with semiconductor waveguides and also for the application to a multi-wavelength light source, we fabricated an InGaAsP/InP semiconductor waveguide-type in-line wavelength selective filter with a Fabry-Perot etalon resonator. A filtering effect was obtained with an almost-designed transmission wavelength interval of 0.8 nm. Fundamental characteristics of the fabricated devices were evaluated, and structures to improve the contrast ratio are discussed.","PeriodicalId":403484,"journal":{"name":"Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198)","volume":"69 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-06-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124599227","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Correlated and anti-correlated vertical self-organization of InAs quantum wires in InAs/InP stacked structures versus the spacer layer nature InAs/InP堆叠结构中InAs量子线的相关和反相关垂直自组织与间隔层性质
Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198) Pub Date : 2001-05-18 DOI: 10.1109/ICIPRM.2001.929198
M. Gendry, J. Brault, C. Monat, J. Kapsa, M. Besland, G. Grenet, O. Marty, M. Pitaval, G. Hollinger
{"title":"Correlated and anti-correlated vertical self-organization of InAs quantum wires in InAs/InP stacked structures versus the spacer layer nature","authors":"M. Gendry, J. Brault, C. Monat, J. Kapsa, M. Besland, G. Grenet, O. Marty, M. Pitaval, G. Hollinger","doi":"10.1109/ICIPRM.2001.929198","DOIUrl":"https://doi.org/10.1109/ICIPRM.2001.929198","url":null,"abstract":"We address vertical self-organization of stacked InAs quantum island layers grown on InP(OO1) substrate using either InP or InAlAs as spacer layers. From AFM imaging we show that, whatever the spacer nature is, wire shaped islands are strongly favored by the stacking process. In contrast, transmission electron microscopy (TEM) studies indicate that the vertical arrangement is strongly dependent on the nature of the spacer layer. On the one hand, for InP spacers, crosssectional TEM images exhibit the well-known correlated vertical alignment of InAs wires usually explained by the strain field induced by buried islands. On the other hand, for InAlAs spacers, the stacking process gives rise to an anti-correlated vertical arrangement of the InAs wires. This anticorrelated arrangement is principally the result of a phase separation taking place in the InAlAs spacer layer. From photoluminescence measurements, we show how growth conditions should be chosen to improve the stacking process versus the vertical arrangement kind. For the correlated arrangement, we have to restrain the increase of the wire size during the stacking process. In contrast, for the anti-correlated arrangement, a relationship between the wire width and the spacer thickness ought to be fulfilled in order to avoid the coming out of wire missing rows responsible of a worsening of wire organization.","PeriodicalId":403484,"journal":{"name":"Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198)","volume":"35 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-05-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116008626","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
1.3-1.5 /spl mu/m wavelength quantum dots self-formed in GaAs/InAs superlattices grown on InP (411) substrates 在InP(411)衬底上生长的GaAs/InAs超晶格中自形成波长1.3 ~ 1.5 μ l /m的量子点
Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198) Pub Date : 2001-05-18 DOI: 10.1109/ICIPRM.2001.929134
J. Mori, S. Matsuda, K. Asami, H. Asahi
{"title":"1.3-1.5 /spl mu/m wavelength quantum dots self-formed in GaAs/InAs superlattices grown on InP (411) substrates","authors":"J. Mori, S. Matsuda, K. Asami, H. Asahi","doi":"10.1109/ICIPRM.2001.929134","DOIUrl":"https://doi.org/10.1109/ICIPRM.2001.929134","url":null,"abstract":"High lateral density (~10-11 cm-2) quantum dot (QD) structures are self-formed by growing the (GaAs)2(InAs)2 short period superlattices (SLs) on InP(411)A substrates by gas source MBE. QD structures are well aligned along two perpendicular directions. Multilayer quantum dot structures sandwiched with InP barrier layers showed strong photoluminescence emission with wavelengths of 1.3 - 1.5μm depending on the SL period.","PeriodicalId":403484,"journal":{"name":"Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198)","volume":"175 ","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-05-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114092991","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Low damage InP sidewall formation by reactive ion etching 反应离子蚀刻低损伤InP侧壁地层
Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198) Pub Date : 2001-05-14 DOI: 10.1109/ICIPRM.2001.929106
N. Saga, T. Masuda, T. Kishi, M. Murata, A. Yamaguchi, T. Katsuyama
{"title":"Low damage InP sidewall formation by reactive ion etching","authors":"N. Saga, T. Masuda, T. Kishi, M. Murata, A. Yamaguchi, T. Katsuyama","doi":"10.1109/ICIPRM.2001.929106","DOIUrl":"https://doi.org/10.1109/ICIPRM.2001.929106","url":null,"abstract":"We investigated the sidewall damage formed by electron-cyclotron-resonance reactive ion etching (ECR-RIE) using CH/sub 4//H/sub 2/. It was found that the reverse current of p-i-n junctions is affected by the O/sub 2/ plasma treatment conditions for removing the hydrocarbon deposited on the etching mask during etching. By optimizing the treatment conditions, we succeeded in low damage sidewall formation, which is of the same quality as the mesa formed by wet etching. AES measurements indicate that the thickness of the damaged region is restricted to about 8 nm.","PeriodicalId":403484,"journal":{"name":"Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198)","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124849356","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Heterointerface optimization in InP based strained MQW laser structures using metalorganic growth technologies 金属有机生长技术在InP基应变MQW激光结构中的异质界面优化
Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198) Pub Date : 2001-05-14 DOI: 10.1109/ICIPRM.2001.929116
P. Kroner, H. Baumeister, J. Rieger, E. Veuhoff, O. Marti, H. Heinecke
{"title":"Heterointerface optimization in InP based strained MQW laser structures using metalorganic growth technologies","authors":"P. Kroner, H. Baumeister, J. Rieger, E. Veuhoff, O. Marti, H. Heinecke","doi":"10.1109/ICIPRM.2001.929116","DOIUrl":"https://doi.org/10.1109/ICIPRM.2001.929116","url":null,"abstract":"Epitaxial growth of InP based strained MQW laser structures is studied for metalorganic vapor phase epitaxy (MOVPE) and metalorganic molecular beam epitaxy (MOMBE or CBE-chemical beam epitaxy). For a tensile barrier layer strain of |/spl epsiv//sub B/|/spl ges/0.4% both in MOVPE and MOMBE, wavy MQW interfaces are observed in TEM along with a severe drop in photoluminescence (PL) intensity and an increase in PL FWHM (full width at half maximum) yielding a significant increase in threshold current density of broad area test lasers. Lateral thickness modulations appear to be much larger in MOVPE than in MOMBE. The V/III ratio appears to be a key parameter for the rate of wavy interface development, which is probably a consequence of surface selective growth. Flat interfaces require low V/III ratios, especially at high strain in the barrier layers resulting in a significant improvement in threshold current density.","PeriodicalId":403484,"journal":{"name":"Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198)","volume":"45 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115543442","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Charge storage effect of the vertically stacked InAs nanodots embedded in Al/sub 0.5/Ga/sub 0.5/As matrix Al/sub 0.5/Ga/sub 0.5/As基体中垂直堆叠InAs纳米点的电荷存储效应
Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198) Pub Date : 2001-05-14 DOI: 10.1109/ICIPRM.2001.929013
K. Koike, S. Li, H. Komai, S. Sasa, M. Inoue, M. Yano
{"title":"Charge storage effect of the vertically stacked InAs nanodots embedded in Al/sub 0.5/Ga/sub 0.5/As matrix","authors":"K. Koike, S. Li, H. Komai, S. Sasa, M. Inoue, M. Yano","doi":"10.1109/ICIPRM.2001.929013","DOIUrl":"https://doi.org/10.1109/ICIPRM.2001.929013","url":null,"abstract":"This report describes the memory effect of an Al/sub 0.5/Ga/sub 0.5/As/GaAs field-effect (FE) structure which contains vertically aligned InAs nanodots in the barrier layer. The FE structure is grown by molecular beam epitaxy using Stranski-Krastanow islands as the nanodots. Charge storage effect of the nanodots is analyzed by a capacitance-voltage measurement and resulted in a hysteresis loop due to the stable electron trapping at nanodot potentials. The amount of charge for the long-term memory retention at 300 K is estimated to be /spl sim/14 nC/cm/sup 2/, which is promising for memory device applications of the FE structure.","PeriodicalId":403484,"journal":{"name":"Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198)","volume":"130 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116518664","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
InP based materials for long wavelength optoelectronics grown in a multiwafer AIX 2400G3 Planetary Reactor(R) 在多晶片AIX 2400G3行星反应器中生长的长波光电子用InP基材料
Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198) Pub Date : 2001-05-14 DOI: 10.1109/ICIPRM.2001.929119
T. Schmitt, M. Deufel, M. Daulesberg, M. Heuken, H. Juergensen
{"title":"InP based materials for long wavelength optoelectronics grown in a multiwafer AIX 2400G3 Planetary Reactor(R)","authors":"T. Schmitt, M. Deufel, M. Daulesberg, M. Heuken, H. Juergensen","doi":"10.1109/ICIPRM.2001.929119","DOIUrl":"https://doi.org/10.1109/ICIPRM.2001.929119","url":null,"abstract":"In this paper reactor simulations and results of the growth of InP based materials (Ga/sub x/In/sub 1-x/As/sub y/P/sub 1-y/) in a Planetary Reactor(R) will be shown. The reactor that has been used was an AIX 2400G3 system in the 8/spl times/3 inch configuration using 2 inch recesses.","PeriodicalId":403484,"journal":{"name":"Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130605616","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Strain-induced lateral ordering and quantum effects in self-assembled GaInAs quantum wires 自组装GaInAs量子线中应变诱导的横向有序和量子效应
Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198) Pub Date : 2001-05-14 DOI: 10.1109/ICIPRM.2001.929014
K. Cheng, D.E. Wohlert
{"title":"Strain-induced lateral ordering and quantum effects in self-assembled GaInAs quantum wires","authors":"K. Cheng, D.E. Wohlert","doi":"10.1109/ICIPRM.2001.929014","DOIUrl":"https://doi.org/10.1109/ICIPRM.2001.929014","url":null,"abstract":"GaInAs quantum wire (QWR) structures have been fabricated using the strain-induced lateral-layer ordering (SILO) process during molecular beam epitaxy. The SILO process is a one-step completely in situ self-assembly method for creating QWRs. The resultant dense array of QWRs has a low defect density, small quantum-like dimensions, and demonstrate strong lateral confinement. More importantly, the band gap of GaInAs QWRs grown by the SILO process responds to temperature changes in ways that deviate from the norm for III-V semiconductors. This band gap behavior with respect to temperature of SILO grown GaInAs QWRs is both physically interesting and potentially applicable to optoelectronic devices.","PeriodicalId":403484,"journal":{"name":"Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198)","volume":"292 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124204777","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
High-power 660-nm AlGaInP laser diodes with a small aspect ratio for the beam divergence 高功率660nm AlGaInP激光二极管具有小宽高比的光束发散
Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198) Pub Date : 2001-05-14 DOI: 10.1109/ICIPRM.2001.929055
R. Hiroyama, D. Inoue, Y. Nomura, M. Shono, M. Sawada
{"title":"High-power 660-nm AlGaInP laser diodes with a small aspect ratio for the beam divergence","authors":"R. Hiroyama, D. Inoue, Y. Nomura, M. Shono, M. Sawada","doi":"10.1109/ICIPRM.2001.929055","DOIUrl":"https://doi.org/10.1109/ICIPRM.2001.929055","url":null,"abstract":"High-power 660-nm AlGaInP laser diodes with a small aspect ratio for beam divergence were successfully fabricated with a window mirror structure. The real index-guided structure was adopted from an investigation into internal loss dependence on the beam divergence in the perpendicular direction. A device with the aspect ration of 1.65 for the beam divergence of 10/spl deg/ and 16.5/spl deg/ in the parallel and perpendicular directions has demonstrated a kink level of 160 mW and maximum light output power of 180 mW, which was limited by thermal saturation. These laser diodes have operated reliably for more than 1500 h at 60/spl deg/C with a light output power of 90 mW under pulsed condition with a width of 100 ns and frequency of 5 MHz. High-power operation and a small aspect ratio were thus achieved, simultaneously.","PeriodicalId":403484,"journal":{"name":"Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198)","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123320678","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Influence of electrode width on high-speed performance of traveling-wave electroabsorption modulators
Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198) Pub Date : 2001-05-14 DOI: 10.1109/ICIPRM.2001.929167
S. Irmscher, R. Lewén, U. Eriksson
{"title":"Influence of electrode width on high-speed performance of traveling-wave electroabsorption modulators","authors":"S. Irmscher, R. Lewén, U. Eriksson","doi":"10.1109/ICIPRM.2001.929167","DOIUrl":"https://doi.org/10.1109/ICIPRM.2001.929167","url":null,"abstract":"InP/InGaAs traveling-wave electro-absorption modulators for 1.55 /spl mu/m were fabricated with on-chip integrated termination resistors. The influence of the electrode width on their microwave properties and modulation bandwidth is measured and analyzed. Reduction of microwave losses and velocity mismatch can be demonstrated for wider electrodes, offering the potential for modulation bandwidth >100 GHz.","PeriodicalId":403484,"journal":{"name":"Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198)","volume":"31 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121497305","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 10
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