M. Otaka, S. Takahashi, K. Utaka, M. Horita, T. Yazaki
{"title":"Fundamental evaluation of semiconductor waveguide-type in-line wavelength selective filter with Fabry-Perot etalon resonator","authors":"M. Otaka, S. Takahashi, K. Utaka, M. Horita, T. Yazaki","doi":"10.1109/ICIPRM.2001.929084","DOIUrl":null,"url":null,"abstract":"As compact filtering devices easily integrated with semiconductor waveguides and also for the application to a multi-wavelength light source, we fabricated an InGaAsP/InP semiconductor waveguide-type in-line wavelength selective filter with a Fabry-Perot etalon resonator. A filtering effect was obtained with an almost-designed transmission wavelength interval of 0.8 nm. Fundamental characteristics of the fabricated devices were evaluated, and structures to improve the contrast ratio are discussed.","PeriodicalId":403484,"journal":{"name":"Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198)","volume":"69 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2001-06-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIPRM.2001.929084","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
As compact filtering devices easily integrated with semiconductor waveguides and also for the application to a multi-wavelength light source, we fabricated an InGaAsP/InP semiconductor waveguide-type in-line wavelength selective filter with a Fabry-Perot etalon resonator. A filtering effect was obtained with an almost-designed transmission wavelength interval of 0.8 nm. Fundamental characteristics of the fabricated devices were evaluated, and structures to improve the contrast ratio are discussed.