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Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198)最新文献

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Well number dependence of highly strained GaIn(N)As MQW structures by metalorganic chemical vapor deposition 金属有机化学气相沉积高应变增益(N)As MQW结构的井数依赖性
Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198) Pub Date : 2001-05-14 DOI: 10.1109/ICIPRM.2001.929130
N. Jikutani, S. Sato, T. Takahashi, A. Itoh, S. Satoh
{"title":"Well number dependence of highly strained GaIn(N)As MQW structures by metalorganic chemical vapor deposition","authors":"N. Jikutani, S. Sato, T. Takahashi, A. Itoh, S. Satoh","doi":"10.1109/ICIPRM.2001.929130","DOIUrl":"https://doi.org/10.1109/ICIPRM.2001.929130","url":null,"abstract":"Highly strained GaInAs/GaAs MQWs (SQW, DQW, TQW) were grown by MOCVD and highly strained GaInNAs/GaAs lasers (SQW, TQW) grown by MOCVD were fabricated to evaluate their characteristics difference by well number. A low threshold current density of 541 A/cm/sup 2/ and a lasing wavelength of 1.276 /spl mu/m were obtained in a 2070 /spl mu/m-cavity length SQW laser. A threshold current density of 1.46 k A/cm/sup 2/ and a lasing wavelength of 1.296 /spl mu/m were obtained in a 1140 /spl mu/m-cavity length TQW laser under pulse operation at room temperature.","PeriodicalId":403484,"journal":{"name":"Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198)","volume":"496 2","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114016437","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Simultaneous measurements of transient photo-current and photoluminescence for (Al/sub 0.7/Ga/sub 0.3/)/sub 0.5/In/sub 0.5/P/Al/sub x/In/sub 1-x/P-superlattices (Al/sub 0.7/Ga/sub 0.3/)/sub 0.5/In/sub 0.5/P/Al/sub x/In/sub 1-x/P超晶格瞬态光电流和光致发光的同时测量
Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198) Pub Date : 2001-05-14 DOI: 10.1109/ICIPRM.2001.929124
Y. Ishitani, K. Matsuya, T. Fujita, K. Nakasa, Y. Harima
{"title":"Simultaneous measurements of transient photo-current and photoluminescence for (Al/sub 0.7/Ga/sub 0.3/)/sub 0.5/In/sub 0.5/P/Al/sub x/In/sub 1-x/P-superlattices","authors":"Y. Ishitani, K. Matsuya, T. Fujita, K. Nakasa, Y. Harima","doi":"10.1109/ICIPRM.2001.929124","DOIUrl":"https://doi.org/10.1109/ICIPRM.2001.929124","url":null,"abstract":"The photoluminescence and the photo-current are simultaneously measured for indirect transition type undoped (Al/sub 0.7/Ga/sub 0.3/)/sub 0.5/In/sub 0.5/P/Al/sub x/In/sub 1-x/P (x=0.53 and 0.57) superlattices. Bias voltage is applied to the semi-transparent Au electrode on the epitaxial layer. From measurements of the sample with x=0.53 (lattice matched to the GaAs substrate) under a bias voltage of +0.3 V, it is found that the carrier transport affects the PL decay curve only slightly. The latter is dominated by radiative carrier recombination. The surface electric field of the sample without electrodes is estimated to be less than 3/spl times/10/sup 3/ V/cm. For the sample with x=0.57, the energy states originating from the crystal defects act as carrier traps under a low electric field, and levels which contribute to the tunneling of electrons through the barriers under a high electric field.","PeriodicalId":403484,"journal":{"name":"Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198)","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125992340","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
1.31 /spl mu/m GaInNAsSb/GaNAs-SQW lasers grown by gas-source MBE 1.31 /spl mu/m气源MBE生长GaInNAsSb/GaNAs-SQW激光器
Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198) Pub Date : 2001-05-14 DOI: 10.1109/ICIPRM.2001.929223
H. Shimizu, K. Kumada, S. Uchiyama, A. Kasukawa
{"title":"1.31 /spl mu/m GaInNAsSb/GaNAs-SQW lasers grown by gas-source MBE","authors":"H. Shimizu, K. Kumada, S. Uchiyama, A. Kasukawa","doi":"10.1109/ICIPRM.2001.929223","DOIUrl":"https://doi.org/10.1109/ICIPRM.2001.929223","url":null,"abstract":"1.31 /spl mu/m GaInNAsSb single quantum-well (SQW) lasers were successfully grown on GaAs substrates by gas-source molecular beam epitaxy (CSMBE). We obtained the very low threshold current density (Jth) of 570 A/cm/sup 2/ at 900 /spl mu/m-long cavity.","PeriodicalId":403484,"journal":{"name":"Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133960610","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Advances in InP HEMT technology for high frequency applications 用于高频应用的InP HEMT技术进展
Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198) Pub Date : 2001-05-14 DOI: 10.1109/ICIPRM.2001.929005
P.M. Smith, K. Nichols, W. Kong, L. MtPleasant, D. Pritchards, R. Lender, J. Fisher, R. Actis, D. Dugas, D. Meharry, A. Swanson
{"title":"Advances in InP HEMT technology for high frequency applications","authors":"P.M. Smith, K. Nichols, W. Kong, L. MtPleasant, D. Pritchards, R. Lender, J. Fisher, R. Actis, D. Dugas, D. Meharry, A. Swanson","doi":"10.1109/ICIPRM.2001.929005","DOIUrl":"https://doi.org/10.1109/ICIPRM.2001.929005","url":null,"abstract":"This paper reviews the remarkable progress being made in the development of InP HEMT devices and circuits for high frequency analog applications. Despite possessing superior performance, widespread use of InP HEMTs has to date been hindered by their relatively high cost (as compared with GaAs-based devices). However, the commercialization of HEMTs with high-indium-content InGaAs channels now appears to be inevitable due to recent progress on two parallel fronts-the development of metamorphic HEMTs (MHEMTs) and the scaling of InP substrates to larger sizes (4 and 6-inch).","PeriodicalId":403484,"journal":{"name":"Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198)","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134391679","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 8
Process and integration technologies for InP ICs InP集成电路的制程与集成技术
Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198) Pub Date : 2001-05-14 DOI: 10.1109/ICIPRM.2001.929185
W. Stanchina, M. Sokolich, K. Elliott
{"title":"Process and integration technologies for InP ICs","authors":"W. Stanchina, M. Sokolich, K. Elliott","doi":"10.1109/ICIPRM.2001.929185","DOIUrl":"https://doi.org/10.1109/ICIPRM.2001.929185","url":null,"abstract":"Indium phosphide HBT technology has evolved over the past fifteen years into a versatile technology to demonstrate a variety of very high frequency integrated circuits. This versatility is achieved from several choices of heterostructure epitaxial materials and a variety of semiconductor processes. This paper summarizes the basic material structures and fabrication processes leading to this versatility along with the basic IC fabrication process and enhancements to it. These choices have enabled organizations world-wide to demonstrate not only the fastest ICs in any technology but also low power operation and ICs applicable to OC-768 fiber optic communications and satellite communications along with the military electronics.","PeriodicalId":403484,"journal":{"name":"Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198)","volume":"118 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133737376","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
InP self-assembled quantum dots embedded in In/sub 0.5/Al/sub 0.3/Ga/sub 0.2/P grown on GaAs substrates by metalorganic chemical vapor deposition 采用金属有机化学气相沉积法在GaAs衬底上生长in /sub 0.5/Al/sub 0.3/Ga/sub 0.2/P自组装量子点
Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198) Pub Date : 2001-05-14 DOI: 10.1109/ICIPRM.2001.929133
J. Ryou, R. Dupuis, D. Mathes, R. Hull, C. V. Reddy, V. Narayanamurti, D. A. Kellogg, G. Walter, N. Holonyak
{"title":"InP self-assembled quantum dots embedded in In/sub 0.5/Al/sub 0.3/Ga/sub 0.2/P grown on GaAs substrates by metalorganic chemical vapor deposition","authors":"J. Ryou, R. Dupuis, D. Mathes, R. Hull, C. V. Reddy, V. Narayanamurti, D. A. Kellogg, G. Walter, N. Holonyak","doi":"10.1109/ICIPRM.2001.929133","DOIUrl":"https://doi.org/10.1109/ICIPRM.2001.929133","url":null,"abstract":"We report the characteristics of InP self-assembled quantum dots embedded in In/sub 0.5/Al/sub 0.3/Ga/sub 0.2/P on GaAs substrates. InP quantum dots are grown at 650/spl deg/C for various deposition times via the Stranski-Krastanow growth mode by metalorganic chemical vapor deposition. Atomic force microscopy and transmission electron microscopy show the formation of densely distributed coherent quantum dots. The InP quantum dots grown for up to \"planar-layer-growth equivalent\" 15 MLs have dominant sizes of 5-20 nm (height) and a density of /spl sim/10 dots/cm/sup 2/. These InP quantum dots have broad range of luminescence corresponding to red or orange in the visible spectrum, depending on growth times. As the deposition time increases, the photoluminescence peak shifts toward the lower energy side, due to an increase in the dominant size of the quantum dots. Also, optical pumping is performed on double-stacked InP quantum dot layers. In addition, InP/In/sub 0.5/Al/sub 0.3/Ga/sub 0.2/P/In/sub 0.49/Al/sub 0.51/P quantum dot heterostructures exhibit stimulated emission at room temperature and laser operation at /spl sim/680 nm.","PeriodicalId":403484,"journal":{"name":"Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198)","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115003758","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Novel scheme for reducing the pattern effect in 40 Gbps SOA based all-optical switch utilizing transparent CW assist light 利用透明连续波辅助光降低40gbps SOA全光开关模式效应的新方案
Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198) Pub Date : 2001-05-14 DOI: 10.1109/ICIPRM.2001.929085
M. Tsurusawa, K. Nishimura, M. Usami
{"title":"Novel scheme for reducing the pattern effect in 40 Gbps SOA based all-optical switch utilizing transparent CW assist light","authors":"M. Tsurusawa, K. Nishimura, M. Usami","doi":"10.1109/ICIPRM.2001.929085","DOIUrl":"https://doi.org/10.1109/ICIPRM.2001.929085","url":null,"abstract":"We have successfully confirmed the reduction of the pattern effect in semiconductor optical amplifier (SOA)-based all-optical switches at 40 Gb/s operation, utilizing the transparent CW assist light which clamped the gain profile of the SOA. Error-free operation without an error floor was obtained with a power penalty of 1 dB compared with the input data stream. The receiver sensitivity improvement of 2.3 dB was confirmed at BER=10/sup -9/. The scheme for the reduction of the pattern effect is an attractive method for high-speed operation because the required signal powers can be small.","PeriodicalId":403484,"journal":{"name":"Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198)","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117049829","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 9
1.26 /spl mu/m GaInNAsSb-SQW lasers grown by gas-source MBE 1.26 /spl mu/m气源MBE生长GaInNAsSb-SQW激光器
Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198) Pub Date : 2001-05-14 DOI: 10.1109/ICIPRM.2001.929128
H. Shimizu, K. Kumada, S. Uchiyama, A. Kasukawa
{"title":"1.26 /spl mu/m GaInNAsSb-SQW lasers grown by gas-source MBE","authors":"H. Shimizu, K. Kumada, S. Uchiyama, A. Kasukawa","doi":"10.1109/ICIPRM.2001.929128","DOIUrl":"https://doi.org/10.1109/ICIPRM.2001.929128","url":null,"abstract":"Long wavelength-GaInNAsSb SQW lasers that include a small amount of Sb were successfully grown by gas-source molecular beam epitaxy (GSMBE). We confirmed that Sb reacts in the highly strained GaInNAs/GaAs system like a surfactant, which increase the critical thickness at which the growth mode changes from the 2-dimensional (2-D) growth to the 3-dimensional (3-D) growth. The GaInNAsSb lasers oscillated under CW operation at 1.258 /spl mu/m at room temperature. The low CW threshold current of 12.4 mA and high characteristic temperature (T/sub 0/) of 157 K were obtained for GaInNAsSb lasers, which is the best result for GaInNAs-based narrow stripe lasers.","PeriodicalId":403484,"journal":{"name":"Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198)","volume":"27 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117209427","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
AlSb/InAs HEMTs with a TiW/Au gate metalization TiW/Au栅极金属化的AlSb/InAs hemt
Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198) Pub Date : 2001-05-14 DOI: 10.1109/ICIPRM.2001.929174
J. B. Boos, B. R. Bennett, W. Kruppa, Doe Park, J. Mittereder, N. H. Turner
{"title":"AlSb/InAs HEMTs with a TiW/Au gate metalization","authors":"J. B. Boos, B. R. Bennett, W. Kruppa, Doe Park, J. Mittereder, N. H. Turner","doi":"10.1109/ICIPRM.2001.929174","DOIUrl":"https://doi.org/10.1109/ICIPRM.2001.929174","url":null,"abstract":"We report on the fabrication and characteristics of AlSb/InAs HEMTs with a TiW/Au gate metalization. Prior to the metal evaporation, the usual oxygen plasma surface pretreatment was adjusted to minimize damage. These HEMTs exhibit decreased gate leakage current in the low drain bias region and similar microwave performance compared to previous HEMTs fabricated from the same material with a Cr/Au gate metal. The HEMTs were found to be thermally stable up to 180/spl deg/C when heat treated in a H/sub 2//N/sub 2/ ambient. TiW/Au diode test structures fabricated on similar HEMT material were thermally stable up to 270/spl deg/C.","PeriodicalId":403484,"journal":{"name":"Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198)","volume":"75 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128597347","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
InGaAs ternary bulk crystal growth method using InGaAs ternary source 使用InGaAs三元源的InGaAs三元体晶体生长方法
Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198) Pub Date : 2001-05-14 DOI: 10.1109/ICIPRM.2001.929034
Y. Nisjima, O. Akasaka, K. Nakajima, K. Otsubo, H. Ishikawa
{"title":"InGaAs ternary bulk crystal growth method using InGaAs ternary source","authors":"Y. Nisjima, O. Akasaka, K. Nakajima, K. Otsubo, H. Ishikawa","doi":"10.1109/ICIPRM.2001.929034","DOIUrl":"https://doi.org/10.1109/ICIPRM.2001.929034","url":null,"abstract":"We have developed a new zone growth method using an InGaAs ternary source to obtain an In/sub x/Ga/sub 1-x/As (x/spl sim/0.3) long single crystal. A seed used for the zone growth method is an InGaAs crystal grown on a [100] GaAs seed by the vertical gradient freeze technique. The new zone growth method is different from the conventional zone growth one in two respects. (1) The source material is changed from GaAs to InGaAs, because the use of a GaAs source causes the lack of InAs in the melt during the zone crystal growth, an InGaAs source is produced by quenching an In/sub x/Ga/sub 1-x/As (x/spl sim/0.3) melt. (2) No isolation plate for reducing the supply rate of the source into the melt is inserted between the source material and the melt. The supply rate of the source is reduced by restraining the convection due to inverting positions of an InGaAs seed and a source material. The InGaAs zone crystal obtained was 15 mm long and the InAs composition (x) was around 0.27. The single crystal region was 8 mm long. The best value of the full widths of the half maximums of the (400) X-ray diffraction peaks was 20 seconds.","PeriodicalId":403484,"journal":{"name":"Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198)","volume":"83 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127023991","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
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