InP集成电路的制程与集成技术

Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198) Pub Date : 2001-05-14 DOI:10.1109/ICIPRM.2001.929185

W. Stanchina, M. Sokolich, K. Elliott

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引用次数: 7

摘要

在过去的十五年中，磷化铟HBT技术已经发展成为一种通用技术，可以演示各种甚高频集成电路。这种多功能性是通过多种异质结构外延材料的选择和各种半导体工艺实现的。本文总结了导致这种通用性的基本材料结构和制造工艺，以及基本的集成电路制造工艺及其改进。这些选择使世界各地的组织不仅展示了任何技术中最快的ic，而且还展示了低功耗操作和ic，适用于OC-768光纤通信和卫星通信以及军事电子设备。

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Process and integration technologies for InP ICs

Indium phosphide HBT technology has evolved over the past fifteen years into a versatile technology to demonstrate a variety of very high frequency integrated circuits. This versatility is achieved from several choices of heterostructure epitaxial materials and a variety of semiconductor processes. This paper summarizes the basic material structures and fabrication processes leading to this versatility along with the basic IC fabrication process and enhancements to it. These choices have enabled organizations world-wide to demonstrate not only the fastest ICs in any technology but also low power operation and ICs applicable to OC-768 fiber optic communications and satellite communications along with the military electronics.

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Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198)

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