金属有机化学气相沉积高应变增益(N)As MQW结构的井数依赖性

Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198) Pub Date : 2001-05-14 DOI:10.1109/ICIPRM.2001.929130

N. Jikutani, S. Sato, T. Takahashi, A. Itoh, S. Satoh

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摘要

通过MOCVD生长高应变GaInAs/GaAs mqw (SQW, DQW, TQW)和MOCVD生长高应变GaInAs/GaAs激光器(SQW, TQW)，通过阱数来评价其特性差异。在腔长为2070 /spl mu/m的SQW激光器中，获得了低阈值电流密度541 A/cm/sup 2/，激光波长为1.276 /spl mu/m。在室温脉冲工作条件下，腔长为1140 /spl μ m的TQW激光器的阈值电流密度为1.46 k A/cm/sup 2/，激光波长为1.296 /spl μ m。

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Well number dependence of highly strained GaIn(N)As MQW structures by metalorganic chemical vapor deposition

Highly strained GaInAs/GaAs MQWs (SQW, DQW, TQW) were grown by MOCVD and highly strained GaInNAs/GaAs lasers (SQW, TQW) grown by MOCVD were fabricated to evaluate their characteristics difference by well number. A low threshold current density of 541 A/cm/sup 2/ and a lasing wavelength of 1.276 /spl mu/m were obtained in a 2070 /spl mu/m-cavity length SQW laser. A threshold current density of 1.46 k A/cm/sup 2/ and a lasing wavelength of 1.296 /spl mu/m were obtained in a 1140 /spl mu/m-cavity length TQW laser under pulse operation at room temperature.

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Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198)

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