1.26 /spl mu/m GaInNAsSb-SQW lasers grown by gas-source MBE

Abstract

Long wavelength-GaInNAsSb SQW lasers that include a small amount of Sb were successfully grown by gas-source molecular beam epitaxy (GSMBE). We confirmed that Sb reacts in the highly strained GaInNAs/GaAs system like a surfactant, which increase the critical thickness at which the growth mode changes from the 2-dimensional (2-D) growth to the 3-dimensional (3-D) growth. The GaInNAsSb lasers oscillated under CW operation at 1.258 /spl mu/m at room temperature. The low CW threshold current of 12.4 mA and high characteristic temperature (T/sub 0/) of 157 K were obtained for GaInNAsSb lasers, which is the best result for GaInNAs-based narrow stripe lasers.