1.26 /spl mu/m气源MBE生长GaInNAsSb-SQW激光器

Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198) Pub Date : 2001-05-14 DOI:10.1109/ICIPRM.2001.929128

H. Shimizu, K. Kumada, S. Uchiyama, A. Kasukawa

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引用次数: 2

摘要

利用气源分子束外延技术(GSMBE)成功地制备了含有少量Sb的长波长gainnassb SQW激光器。我们证实Sb在高应变GaInNAs/GaAs体系中起到表面活性剂的作用，增加了生长模式从二维(2-D)生长到三维(3-D)生长的临界厚度。GaInNAsSb激光器在室温下以1.258 /spl mu/m的连续波振荡。GaInNAsSb激光器获得了12.4 mA的低连续波阈值电流和157 K的高特性温度(T/sub 0/)，这是基于gainnas的窄条纹激光器的最佳结果。

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1.26 /spl mu/m GaInNAsSb-SQW lasers grown by gas-source MBE

Long wavelength-GaInNAsSb SQW lasers that include a small amount of Sb were successfully grown by gas-source molecular beam epitaxy (GSMBE). We confirmed that Sb reacts in the highly strained GaInNAs/GaAs system like a surfactant, which increase the critical thickness at which the growth mode changes from the 2-dimensional (2-D) growth to the 3-dimensional (3-D) growth. The GaInNAsSb lasers oscillated under CW operation at 1.258 /spl mu/m at room temperature. The low CW threshold current of 12.4 mA and high characteristic temperature (T/sub 0/) of 157 K were obtained for GaInNAsSb lasers, which is the best result for GaInNAs-based narrow stripe lasers.

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Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198)

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