用于高频应用的InP HEMT技术进展

Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198) Pub Date : 2001-05-14 DOI:10.1109/ICIPRM.2001.929005

P.M. Smith, K. Nichols, W. Kong, L. MtPleasant, D. Pritchards, R. Lender, J. Fisher, R. Actis, D. Dugas, D. Meharry, A. Swanson

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引用次数: 8

摘要

本文综述了用于高频模拟应用的InP HEMT器件和电路的发展取得的显著进展。尽管具有优越的性能，但迄今为止，由于其相对较高的成本(与基于砷化镓的器件相比)，阻碍了InP hemt的广泛使用。然而，具有高铟含量InGaAs通道的hemt商业化现在似乎是不可避免的，因为最近两个平行前沿的进展-变质hemt (mhemt)的发展和InP衬底的缩放到更大尺寸(4英寸和6英寸)。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Advances in InP HEMT technology for high frequency applications

This paper reviews the remarkable progress being made in the development of InP HEMT devices and circuits for high frequency analog applications. Despite possessing superior performance, widespread use of InP HEMTs has to date been hindered by their relatively high cost (as compared with GaAs-based devices). However, the commercialization of HEMTs with high-indium-content InGaAs channels now appears to be inevitable due to recent progress on two parallel fronts-the development of metamorphic HEMTs (MHEMTs) and the scaling of InP substrates to larger sizes (4 and 6-inch).

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Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198)

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