1.31 /spl mu/m GaInNAsSb/GaNAs-SQW lasers grown by gas-source MBE

Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198) Pub Date : 2001-05-14 DOI:10.1109/ICIPRM.2001.929223

H. Shimizu, K. Kumada, S. Uchiyama, A. Kasukawa

引用次数: 0

Abstract

1.31 /spl mu/m GaInNAsSb single quantum-well (SQW) lasers were successfully grown on GaAs substrates by gas-source molecular beam epitaxy (CSMBE). We obtained the very low threshold current density (Jth) of 570 A/cm/sup 2/ at 900 /spl mu/m-long cavity.

查看原文本刊更多论文

1.31 /spl mu/m气源MBE生长GaInNAsSb/GaNAs-SQW激光器

利用气源分子束外延技术(CSMBE)在GaAs衬底上成功生长出1.31 /spl μ m GaInNAsSb单量子阱(SQW)激光器。我们获得了极低的阈值电流密度(Jth)为570 A/cm/sup 2/ 900 /spl mu/m长腔。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

求助全文

约1分钟内获得全文求助全文

来源期刊

Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198)

自引率

0.00%

发文量