反应离子蚀刻低损伤InP侧壁地层

Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198) Pub Date : 2001-05-14 DOI:10.1109/ICIPRM.2001.929106

N. Saga, T. Masuda, T. Kishi, M. Murata, A. Yamaguchi, T. Katsuyama

{"title":"反应离子蚀刻低损伤InP侧壁地层","authors":"N. Saga, T. Masuda, T. Kishi, M. Murata, A. Yamaguchi, T. Katsuyama","doi":"10.1109/ICIPRM.2001.929106","DOIUrl":null,"url":null,"abstract":"We investigated the sidewall damage formed by electron-cyclotron-resonance reactive ion etching (ECR-RIE) using CH/sub 4//H/sub 2/. It was found that the reverse current of p-i-n junctions is affected by the O/sub 2/ plasma treatment conditions for removing the hydrocarbon deposited on the etching mask during etching. By optimizing the treatment conditions, we succeeded in low damage sidewall formation, which is of the same quality as the mesa formed by wet etching. AES measurements indicate that the thickness of the damaged region is restricted to about 8 nm.","PeriodicalId":403484,"journal":{"name":"Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198)","volume":"12 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2001-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Low damage InP sidewall formation by reactive ion etching\",\"authors\":\"N. Saga, T. Masuda, T. Kishi, M. Murata, A. Yamaguchi, T. Katsuyama\",\"doi\":\"10.1109/ICIPRM.2001.929106\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We investigated the sidewall damage formed by electron-cyclotron-resonance reactive ion etching (ECR-RIE) using CH/sub 4//H/sub 2/. It was found that the reverse current of p-i-n junctions is affected by the O/sub 2/ plasma treatment conditions for removing the hydrocarbon deposited on the etching mask during etching. By optimizing the treatment conditions, we succeeded in low damage sidewall formation, which is of the same quality as the mesa formed by wet etching. AES measurements indicate that the thickness of the damaged region is restricted to about 8 nm.\",\"PeriodicalId\":403484,\"journal\":{\"name\":\"Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198)\",\"volume\":\"12 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2001-05-14\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICIPRM.2001.929106\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIPRM.2001.929106","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 1

摘要

利用CH/sub - 4//H/sub - 2/对电子-回旋共振反应离子刻蚀(ECR-RIE)形成的侧壁损伤进行了研究。研究发现，p-i-n结的反向电流受O/sub /等离子体处理条件的影响，以去除蚀刻过程中沉积在蚀刻掩膜上的碳氢化合物。通过优化处理条件，我们成功地形成了低损伤的侧壁，其质量与湿法蚀刻形成的台面相同。AES测量表明，损伤区域的厚度限制在8 nm左右。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Low damage InP sidewall formation by reactive ion etching

We investigated the sidewall damage formed by electron-cyclotron-resonance reactive ion etching (ECR-RIE) using CH/sub 4//H/sub 2/. It was found that the reverse current of p-i-n junctions is affected by the O/sub 2/ plasma treatment conditions for removing the hydrocarbon deposited on the etching mask during etching. By optimizing the treatment conditions, we succeeded in low damage sidewall formation, which is of the same quality as the mesa formed by wet etching. AES measurements indicate that the thickness of the damaged region is restricted to about 8 nm.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198)

自引率

0.00%

发文量