InP based materials for long wavelength optoelectronics grown in a multiwafer AIX 2400G3 Planetary Reactor(R)

Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198) Pub Date : 2001-05-14 DOI:10.1109/ICIPRM.2001.929119

T. Schmitt, M. Deufel, M. Daulesberg, M. Heuken, H. Juergensen

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Abstract

In this paper reactor simulations and results of the growth of InP based materials (Ga/sub x/In/sub 1-x/As/sub y/P/sub 1-y/) in a Planetary Reactor(R) will be shown. The reactor that has been used was an AIX 2400G3 system in the 8/spl times/3 inch configuration using 2 inch recesses.

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在多晶片AIX 2400G3行星反应器中生长的长波光电子用InP基材料

本文将给出在行星反应器(R)中生长InP基材料(Ga/sub x/In/sub 1-x/As/sub y/P/sub 1-y/)的反应器模拟和结果。所使用的反应器是AIX 2400G3系统，配置为8/ sp1 /3英寸，使用2英寸的凹槽。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198)

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