Al/sub 0.5/Ga/sub 0.5/As基体中垂直堆叠InAs纳米点的电荷存储效应

Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198) Pub Date : 2001-05-14 DOI:10.1109/ICIPRM.2001.929013

K. Koike, S. Li, H. Komai, S. Sasa, M. Inoue, M. Yano

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摘要

本文描述了Al/sub 0.5/Ga/sub 0.5/As/GaAs场效应(FE)结构的记忆效应，该结构在势垒层中含有垂直排列的InAs纳米点。利用Stranski-Krastanow岛作为纳米点，采用分子束外延法生长FE结构。通过电容-电压测量分析了纳米点的电荷存储效应，并分析了在纳米点电位下稳定的电子捕获导致的磁滞回线。在300 K时，长期记忆保持的电荷量估计为/spl sim/14 nC/cm/sup 2/，这对于FE结构的存储器件应用是有希望的。

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Charge storage effect of the vertically stacked InAs nanodots embedded in Al/sub 0.5/Ga/sub 0.5/As matrix

This report describes the memory effect of an Al/sub 0.5/Ga/sub 0.5/As/GaAs field-effect (FE) structure which contains vertically aligned InAs nanodots in the barrier layer. The FE structure is grown by molecular beam epitaxy using Stranski-Krastanow islands as the nanodots. Charge storage effect of the nanodots is analyzed by a capacitance-voltage measurement and resulted in a hysteresis loop due to the stable electron trapping at nanodot potentials. The amount of charge for the long-term memory retention at 300 K is estimated to be /spl sim/14 nC/cm/sup 2/, which is promising for memory device applications of the FE structure.

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Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198)

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