1.3-1.5 /spl mu/m wavelength quantum dots self-formed in GaAs/InAs superlattices grown on InP (411) substrates

Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198) Pub Date : 2001-05-18 DOI:10.1109/ICIPRM.2001.929134

J. Mori, S. Matsuda, K. Asami, H. Asahi

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Abstract

High lateral density (~10-11 cm-2) quantum dot (QD) structures are self-formed by growing the (GaAs)2(InAs)2 short period superlattices (SLs) on InP(411)A substrates by gas source MBE. QD structures are well aligned along two perpendicular directions. Multilayer quantum dot structures sandwiched with InP barrier layers showed strong photoluminescence emission with wavelengths of 1.3 - 1.5μm depending on the SL period.

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在InP(411)衬底上生长的GaAs/InAs超晶格中自形成波长1.3 ~ 1.5 μ l /m的量子点

利用气源MBE在InP(411)A衬底上生长(GaAs)2(InAs)2短周期超晶格(SLs)，自形成了高横向密度(~10-11 cm-2)量子点结构。量子点结构沿两个垂直方向排列良好。夹有InP势垒层的多层量子点结构表现出较强的光致发光，波长随SL周期的变化在1.3 ~ 1.5μm之间。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198)

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