W.K. Liu, D. Lubyshev, Y. Wu, X. Fang, T. Yurasits, A. Cornfeld, D. Mensa, S. Jaganathan, R. Pullela, M. Dahlstrom, P. Sundararajan, T. Mathew, M. Rodwell
{"title":"大直径inp基晶格匹配和变质HBTs的MBE生长","authors":"W.K. Liu, D. Lubyshev, Y. Wu, X. Fang, T. Yurasits, A. Cornfeld, D. Mensa, S. Jaganathan, R. Pullela, M. Dahlstrom, P. Sundararajan, T. Mathew, M. Rodwell","doi":"10.1109/ICIPRM.2001.929113","DOIUrl":null,"url":null,"abstract":"InAlAs/InGaAs/InP heterojunction bipolar transistor (HBT) structures were grown lattice-matched on InP substrates and metamorphically on GaAs substrates by molecular beam epitaxy. Generic structures with a thin base of 500 /spl Aring/ and doped at 4/spl times/10/sup 19/ cm/sup -3/ were chosen to support the frequency response required for advanced wireless and fiber-optic telecommunication products. Beryllium- and carbon-doped large-area devices were found to exhibit similar DC characteristics. No significant difference in current gain or linearity was observed for metamorphic devices compared to their lattice-matched counterparts.","PeriodicalId":403484,"journal":{"name":"Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198)","volume":"12 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2001-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":"{\"title\":\"MBE growth of large diameter InP-based lattice-matched and metamorphic HBTs\",\"authors\":\"W.K. Liu, D. Lubyshev, Y. Wu, X. Fang, T. Yurasits, A. Cornfeld, D. Mensa, S. Jaganathan, R. Pullela, M. Dahlstrom, P. Sundararajan, T. Mathew, M. Rodwell\",\"doi\":\"10.1109/ICIPRM.2001.929113\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"InAlAs/InGaAs/InP heterojunction bipolar transistor (HBT) structures were grown lattice-matched on InP substrates and metamorphically on GaAs substrates by molecular beam epitaxy. Generic structures with a thin base of 500 /spl Aring/ and doped at 4/spl times/10/sup 19/ cm/sup -3/ were chosen to support the frequency response required for advanced wireless and fiber-optic telecommunication products. Beryllium- and carbon-doped large-area devices were found to exhibit similar DC characteristics. No significant difference in current gain or linearity was observed for metamorphic devices compared to their lattice-matched counterparts.\",\"PeriodicalId\":403484,\"journal\":{\"name\":\"Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198)\",\"volume\":\"12 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2001-05-14\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"5\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICIPRM.2001.929113\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIPRM.2001.929113","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
MBE growth of large diameter InP-based lattice-matched and metamorphic HBTs
InAlAs/InGaAs/InP heterojunction bipolar transistor (HBT) structures were grown lattice-matched on InP substrates and metamorphically on GaAs substrates by molecular beam epitaxy. Generic structures with a thin base of 500 /spl Aring/ and doped at 4/spl times/10/sup 19/ cm/sup -3/ were chosen to support the frequency response required for advanced wireless and fiber-optic telecommunication products. Beryllium- and carbon-doped large-area devices were found to exhibit similar DC characteristics. No significant difference in current gain or linearity was observed for metamorphic devices compared to their lattice-matched counterparts.
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