Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198)最新文献_第9页

High power density and power added efficiency of Al/sub 0.5/In/sub 0.5/P/InGaAs doped-channel HFETs Al/sub 0.5/In/sub 0.5/P/InGaAs掺杂沟道hfet具有较高的功率密度和功率增益效率

Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198) Pub Date : 2001-05-14 DOI: 10.1109/ICIPRM.2001.929089

H. Chiu, S.C. Yang, Y. Chan, J. Kuo

引用次数: 0

Status of InP-based metal organic MBE with reference to conventional MBE and MOVPE inp基金属有机MBE的现状与传统MBE和MOVPE的比较

Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198) Pub Date : 2001-05-14 DOI: 10.1109/ICIPRM.2001.929208

H. Kunzel, R. Gibis, R. Kaiser, S. Malchow, S. Schelhase

{"title":"Status of InP-based metal organic MBE with reference to conventional MBE and MOVPE","authors":"H. Kunzel, R. Gibis, R. Kaiser, S. Malchow, S. Schelhase","doi":"10.1109/ICIPRM.2001.929208","DOIUrl":"https://doi.org/10.1109/ICIPRM.2001.929208","url":null,"abstract":"The applicability of selective area MOMBE for the monolithic integration of optoelectronic devices has been demonstrated. Selective deposition, either selective area or selective infill growth, was successfully applied to accomplish butt-coupling of active laser-type and passive or electro-optic waveguide-type devices in different laboratories. Regarding butt-joints MOMBE basically offers distinct advantages because its growth habit is virtually independent of geometrical mask pattern effects due to the absence of gas-phase related diffusion effects resulting in a simplified deposition process. Development of an optimized MOMBE growth process resulted in vertical sidewalls in combination with uniform material properties up to lateral growth interfaces thus avoiding MOVPE related deficiencies like enhanced growth rates near masked areas limiting compactness of PIC design. Nevertheless, this gain available by MOMBE is contrasted by the enhanced complexity of MOMBE arising from the combination of technical, i.e. need of UHV conditions, and chemical, use of metalorganic sources, challenges.","PeriodicalId":403484,"journal":{"name":"Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198)","volume":"45 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123799839","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

Ultrafast optical pulse compression using a semiconductor nonlinear Bragg reflector 利用半导体非线性布拉格反射器的超快光脉冲压缩

Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198) Pub Date : 2001-05-14 DOI: 10.1109/ICIPRM.2001.929182

K. Ogawa, Y. Matsui

引用次数: 0

Selective MOVPE of microarray waveguide for densely integrated photonic devices 密集集成光子器件微阵列波导的选择性MOVPE

Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198) Pub Date : 2001-05-14 DOI: 10.1109/ICIPRM.2001.929140

S. Sudo, K. Kudo, K. Mori, T. Sasaki

引用次数: 1

Deeply etched 1.55 /spl mu/m wavelength distributed-reflector lasers with vertical grating 具有垂直光栅的深蚀刻1.55 /spl μ m波长分布反射激光器

Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198) Pub Date : 2001-05-14 DOI: 10.1109/ICIPRM.2001.929008

J. Wiedmann, K. Ebihara, H. Kim, K. Matsui, S. Tamura, B. Chen, S. Arai

引用次数: 0

A numerical analysis to study the effects of process related variations in the extrinsic base design on dc current gain of InAlAs/InGaAs/InP DHBTs 通过数值分析研究了外源基面设计中工艺相关变化对InAlAs/InGaAs/InP DHBTs直流增益的影响

Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198) Pub Date : 2001-05-14 DOI: 10.1109/ICIPRM.2001.929096

T. Hussain, B. Shi, C. Nguyen, M. Madhav, M. Sokolich

{"title":"A numerical analysis to study the effects of process related variations in the extrinsic base design on dc current gain of InAlAs/InGaAs/InP DHBTs","authors":"T. Hussain, B. Shi, C. Nguyen, M. Madhav, M. Sokolich","doi":"10.1109/ICIPRM.2001.929096","DOIUrl":"https://doi.org/10.1109/ICIPRM.2001.929096","url":null,"abstract":"The 2-D simulation program DESSIS was used to simulate InAlAs/InGaAs/InP DHBTs and compare the calculated Gummel plots with measurements from experimental devices employing the same structure. The simulations show that a combination of bulk recombination in the intrinsic device and lateral diffusion of minority carriers to the base contact limit the peak gain of these DHBTs; the lateral diffusion of minority carriers is strongly related to both the lateral and vertical placement of the base contact. For an emitter-edge to base-contact distance, W/sub bl/, as low as 200 nm the lateral diffusion component of the base contact is essentially negligible and peak gain is limited largely by bulk recombination. Conversely, for short W/sub bl/ of 20 nm, which would be typical of self-aligned devices, lateral diffusion is the dominant part of base current and hence, the major factor limiting peak gain. The presence of a residual spacer layer in the extrinsic device is shown to accentuate the gain degradation through enhanced space charge recombination and lateral electron diffusion.","PeriodicalId":403484,"journal":{"name":"Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129829068","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 2

Electrochemical formation of self-assembled nanopore arrays as templates for MBE growth of InP-based quantum wires and dots 自组装纳米孔阵列的电化学形成作为inp基量子线和量子点的MBE生长模板

Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198) Pub Date : 2001-05-14 DOI: 10.1109/ICIPRM.2001.929137

T. Hirano, A. Ito, T. Sato, F. Ishikawa, H. Hasegawa

引用次数: 0

Epitaxial growth and amphoteric doping on GaAs (n11)A-oriented substrates GaAs (n11) a取向衬底的外延生长和两性掺杂

Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198) Pub Date : 2001-05-14 DOI: 10.1109/ICIPRM.2001.929015

P. Vaccaro

引用次数: 2

Semiconductor photonic waveguide structures made by a reactive beam etching technique 用反应束蚀刻技术制备半导体光子波导结构

Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198) Pub Date : 2001-05-14 DOI: 10.1109/ICIPRM.2001.929022

S. Oku, Y. Shibata

引用次数: 4

Effects of the barrier height on optical anisotropy of [110]-oriented strained quantum wells 势垒高度对[110]取向应变量子阱光学各向异性的影响

Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198) Pub Date : 2001-05-14 DOI: 10.1109/ICIPRM.2001.929056

Y. Kajikawa

引用次数: 0