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Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198)最新文献

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Formation and characterization of Al/sub x/Mo/sub 1-x//n-InP alloy electrode system for realization of thermally stable ohmic contacts 实现热稳定欧姆接触的Al/sub -x/ Mo/sub - 1-x/ n-InP合金电极体系的形成与表征
Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198) Pub Date : 2001-05-14 DOI: 10.1109/ICIPRM.2001.929108
R. Atsuchi, M. Takeyama, A. Noya, T. Hashizume, H. Hasegawa
{"title":"Formation and characterization of Al/sub x/Mo/sub 1-x//n-InP alloy electrode system for realization of thermally stable ohmic contacts","authors":"R. Atsuchi, M. Takeyama, A. Noya, T. Hashizume, H. Hasegawa","doi":"10.1109/ICIPRM.2001.929108","DOIUrl":"https://doi.org/10.1109/ICIPRM.2001.929108","url":null,"abstract":"A novel metallization scheme of Al/sub 0.9/Mo/sub 0.1//n-InP is demonstrated to serve as a thermally stable ohmic contact. Ohmic behavior was obtained in the as-deposited contact, and the linear I-V characteristic was maintained after annealing at 500/spl deg/C for 20 s. It was found that the ohmic behavior was related to the diffusion of Al with Mo into the InP substrate, forming Al-Mo-P compounds at the interface. The initially formed interfacial products scarcely change upon annealing, which is considered to be the main reason for the stable electrical properties in the Al/sub 0.9/Mo/sub 0.1//InP contact.","PeriodicalId":403484,"journal":{"name":"Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198)","volume":"135 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134234085","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Micro-Raman analysis of molar fraction in polycrystalline In/sub x/Ga/sub 1-x/ for traveling liquidus zone growth method 多晶in /sub -x/ Ga/sub - 1-x中摩尔分数的微拉曼分析
Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198) Pub Date : 2001-05-14 DOI: 10.1109/ICIPRM.2001.929046
M.R. Islam, P. Verma, M. Yamada, M. Tatsumi, K. Kinoshita
{"title":"Micro-Raman analysis of molar fraction in polycrystalline In/sub x/Ga/sub 1-x/ for traveling liquidus zone growth method","authors":"M.R. Islam, P. Verma, M. Yamada, M. Tatsumi, K. Kinoshita","doi":"10.1109/ICIPRM.2001.929046","DOIUrl":"https://doi.org/10.1109/ICIPRM.2001.929046","url":null,"abstract":"In/sub x/Ga/sub 1-x/As is a tunable lattice matched bulk substrate material for fabricating InGaAs-based optoelectronic devices. Spatial homogeneity in molar fraction for such substrates is essential. It is planned to grow compositionally homogeneous In/sub x/Ga/sub 1-x/As bulk substrate using In/sub x/Ga/sub 1-x/As polycrystals with graded molar fraction profile as the starting material in the traveling liquidus zone growth method. To analyze these starting materials, particularly the molar fraction, non-destructive techniques are essential. In this paper, we report some results on micro-Raman studies in these polycrystalline starting materials with various values of molar fraction, and a polycrystalline In/sub x/Ga/sub 1-x/As cylindrical sample with graded molar fraction profile. Estimated molar fraction using Raman scattering for various polycrystalline samples show good agreements with those examined by chemical analysis. We further report the effect of surface condition on our results, using micro-Raman technique.","PeriodicalId":403484,"journal":{"name":"Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130116463","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Realization of InAsP compliant substrates for the fabrication of lattice-mismatched InP-based devices 用于制造晶格不匹配inp基器件的InAsP兼容衬底的实现
Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198) Pub Date : 2001-05-14 DOI: 10.1109/ICIPRM.2001.929117
K. Vanhollebeke, J. Nica, I. Moerman, P. van Daele
{"title":"Realization of InAsP compliant substrates for the fabrication of lattice-mismatched InP-based devices","authors":"K. Vanhollebeke, J. Nica, I. Moerman, P. van Daele","doi":"10.1109/ICIPRM.2001.929117","DOIUrl":"https://doi.org/10.1109/ICIPRM.2001.929117","url":null,"abstract":"Thin pseudomorphic InAs/sub 0.25/P/sub 0.75/ layers were grown by metal organic vapor phase epitaxy (MOVPE) onto InP and subsequently successfully transferred to InP and Ge host substrates through direct bonding. Through in plane angular misalignment InAs/sub y/P/sub 1-y/ twist bonded compliant substrates were fabricated and were analyzed using XRD, revealing important differences between using different host substrates. Lattice-mismatched In/sub 1-x/Ga/sub x/As layers were grown onto these InAsP twist bonded compliant substrates by MOVPE. They were analyzed using photoluminescence (PL) and x-ray diffraction (XRD), and compared to deposition onto InP substrates. The results indicate that the InAsP TB compliant substrates can be used for the realization of low-defect density lattice-mismatched InP-based devices.","PeriodicalId":403484,"journal":{"name":"Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198)","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129793666","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Multi quantum well (MQW) lasers at 1550 nm fabricated with a single epitaxial selective growth step by MOVPE without waveguide etching 在无波导刻蚀的情况下，利用MOVPE单外延选择性生长步骤制备了1550 nm的多量子阱激光器
Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198) Pub Date : 2001-05-14 DOI: 10.1109/ICIPRM.2001.929047
T. van Caenegem, D. van Thourhout, P. van Daele, R. Baets, I. Moerman
{"title":"Multi quantum well (MQW) lasers at 1550 nm fabricated with a single epitaxial selective growth step by MOVPE without waveguide etching","authors":"T. van Caenegem, D. van Thourhout, P. van Daele, R. Baets, I. Moerman","doi":"10.1109/ICIPRM.2001.929047","DOIUrl":"https://doi.org/10.1109/ICIPRM.2001.929047","url":null,"abstract":"MQW lasers have been fabricated by means of a single selective epitaxial growth and without waveguide etching. Flat layer interfaces have been obtained for a wide range of mask widths and mask openings while retaining material quality and providing wide bandgap tuning range through the use of QW's. Initial results show good laser performance at 1550 nm demonstrating the feasibility of the easy fabrication method for the realisation of more complex devices by means of active-passive integration.","PeriodicalId":403484,"journal":{"name":"Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198)","volume":"50 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124585949","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Droplet hetero-epitaxy of InAs quantum dots on InP nanopyramids formed by selective-area flow rate modulation epitaxy 选择性面积流量调制外延形成的InP纳米锥体上InAs量子点的液滴异质外延
Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198) Pub Date : 2001-05-14 DOI: 10.1109/ICIPRM.2001.929144
R. Oga, S. Yamamoto, I. Ohzawa, Y. Fujiwara, Y. Takeda
{"title":"Droplet hetero-epitaxy of InAs quantum dots on InP nanopyramids formed by selective-area flow rate modulation epitaxy","authors":"R. Oga, S. Yamamoto, I. Ohzawa, Y. Fujiwara, Y. Takeda","doi":"10.1109/ICIPRM.2001.929144","DOIUrl":"https://doi.org/10.1109/ICIPRM.2001.929144","url":null,"abstract":"We have grown InAs quantum structures by droplet hetero-epitaxy on InP nanopyramids and investigated their luminescence properties. The nanopyramids with improved size control are formed successfully by selective-area flow rate modulation epitaxy (FME). In photoluminescence (PL) measurements at 4.2 K, characteristic luminescence due to InAs quantum structures is observed clearly, depending slightly on TMIn supply time for InAs growth. We have also compared the luminescence in the samples with differently patterned areas.","PeriodicalId":403484,"journal":{"name":"Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198)","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123278004","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Optical transitions in new semiconductor alloy GaAs/sub 1-x/Bi/sub x/ with temperature-insensitive band gap 具有温度不敏感带隙的新型半导体合金GaAs/sub - 1-x/Bi/sub -x的光学跃迁
Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198) Pub Date : 2001-05-14 DOI: 10.1109/ICIPRM.2001.929030
J. Yoshida, H. Yamamizu, T. Kita, K. Oe
{"title":"Optical transitions in new semiconductor alloy GaAs/sub 1-x/Bi/sub x/ with temperature-insensitive band gap","authors":"J. Yoshida, H. Yamamizu, T. Kita, K. Oe","doi":"10.1109/ICIPRM.2001.929030","DOIUrl":"https://doi.org/10.1109/ICIPRM.2001.929030","url":null,"abstract":"We performed photoreflectance (PR) spectroscopy in order to investigate fundamental band-edge transitions of GaAs/sub 1-x/Bi/sub x/ alloys. GaBi-mole fractions of GaAs/sub 1-x/Bi/sub x/ investigated in this study are 0, 0.005, 0.012 and 0.024. The PR spectra for the four samples exhibit Franz-Keldysh oscillations (FKO) above the band-gap energy due to the built-in electric field. The FKO signal enables us to evaluate the band-gap energy. We found that a small amount of the Bi content succeeds in producing a temperature-insensitive band gap. The reduced effective mass ratio between the heavy- and light-hole bands /spl mu//sub hh///spl mu//sub lh/ was estimated by fast Fourier-transform analysis for the PR spectra. These results show that /spl mu//sub hh///spl mu//sub lh/ is larger for higher Bi content.","PeriodicalId":403484,"journal":{"name":"Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198)","volume":"110 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115549068","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
InP/InGaAsP wafer-bonded vertically coupled X-crossing multiple channel optical add-drop multiplexer InP/InGaAsP晶圆键合垂直耦合x交叉多通道光加降多路复用器
Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198) Pub Date : 2001-05-14 DOI: 10.1109/ICIPRM.2001.929067
M. Raburn, B. Liu, Y. Okuno, J. Bowers
{"title":"InP/InGaAsP wafer-bonded vertically coupled X-crossing multiple channel optical add-drop multiplexer","authors":"M. Raburn, B. Liu, Y. Okuno, J. Bowers","doi":"10.1109/ICIPRM.2001.929067","DOIUrl":"https://doi.org/10.1109/ICIPRM.2001.929067","url":null,"abstract":"A vertically coupled InP/InGaAsP crossed waveguide optical add-drop multiplexer (OADM) has been realized through the use of wafer bonding. Designed for signals in the 1550-nm range, this novel device requires only a single epitaxial growth and illustrates the use of vertical optical interconnects for the three-dimensional routing of optical signals. To our knowledge, it is also one of the first optical vertically coupled devices with no horizontally coupled counterpart.","PeriodicalId":403484,"journal":{"name":"Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198)","volume":"9 4","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132501936","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Strained MQW electro-absorption modulators with high extinction ratio and low capacitance 具有高消光比和低电容的应变MQW电吸收调制器
Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198) Pub Date : 2001-05-14 DOI: 10.1109/ICIPRM.2001.929060
Y. Sun, W. Wang, W. Chen, G.L. Liu, F. Zhou, H. Zhu
{"title":"Strained MQW electro-absorption modulators with high extinction ratio and low capacitance","authors":"Y. Sun, W. Wang, W. Chen, G.L. Liu, F. Zhou, H. Zhu","doi":"10.1109/ICIPRM.2001.929060","DOIUrl":"https://doi.org/10.1109/ICIPRM.2001.929060","url":null,"abstract":"We fabricate an electro-absorption modulator for optical network system using a new strategy. The improved modulation properties of the strained InGaAs/InAlAs MQW show it's polarization independent, high extinction ratio (>40 dB) and low capacitance (C<0.6 pF) which can achieve an ultra-high frequency (>10 GHz). The device is be used in 10 Gbps optical time division multiplex (OTDM) system as a signal generator.","PeriodicalId":403484,"journal":{"name":"Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198)","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114093996","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Transport properties for different bubbler designs [MOVPE] 不同起泡器设计的输运特性[MOVPE]
Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198) Pub Date : 2001-05-14 DOI: 10.1109/ICIPRM.2001.929120
M.S. Ravetz, R. Odedra, L. M. Smith, S. Rushworth, A. B. Leese, G. Williams, R. Kanjolia
{"title":"Transport properties for different bubbler designs [MOVPE]","authors":"M.S. Ravetz, R. Odedra, L. M. Smith, S. Rushworth, A. B. Leese, G. Williams, R. Kanjolia","doi":"10.1109/ICIPRM.2001.929120","DOIUrl":"https://doi.org/10.1109/ICIPRM.2001.929120","url":null,"abstract":"In the MOVPE process a steady, controllable flux of precursor into the reaction chamber is a key factor when fabricating highly complex device structures employing ternary and quaternary layers. Historically a simple bubbler design has been employed to perform this task with carrier gas flow and source temperature control able to provide a suitably stable system. However, with the increasing volume demands placed on MOVPE equipment, increased flows and larger bubblers have become necessary and the simple dip tube (dip leg) approach is no longer 100% suitable. In this study, an investigation of 3 novel bubbler dip tube designs have been performed and a comparison made with the standard approach. An Epison III ultrasonic analyser was employed to monitor the pick up of the precursor from a variety of bubblers across a range of flow rates and temperatures. Flows up to 10 sclm have been investigated and differences observed between bubbler dip leg designs the results of which highlight the improvements achievable using a new crosspiece dip tube design.","PeriodicalId":403484,"journal":{"name":"Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198)","volume":"39 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115870875","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
GaInNP: a novel material for electronic and optoelectronic applications GaInNP:一种用于电子和光电子应用的新型材料
Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198) Pub Date : 2001-05-14 DOI: 10.1109/ICIPRM.2001.929221
C. Tu, Y. G. Hong, R. André, H. Xin
{"title":"GaInNP: a novel material for electronic and optoelectronic applications","authors":"C. Tu, Y. G. Hong, R. André, H. Xin","doi":"10.1109/ICIPRM.2001.929221","DOIUrl":"https://doi.org/10.1109/ICIPRM.2001.929221","url":null,"abstract":"Adding /spl sim/0.5% N to GaInP grown on GaAs results in near zero conduction band discontinuity, and, thus, GaInNP could be an ideal material for HBTs. Adding also /spl sim/0.5% N to GaP results in direct bandgap, and GaNP/GaP light-emitting diodes are demonstrated.","PeriodicalId":403484,"journal":{"name":"Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198)","volume":"119 35","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"120825753","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
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