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Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198)最新文献

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Progress on the OMVPE of GaInP Stranski-Krastanov islands on GaP/Si substrates GaP/Si基底上GaInP stranski - krstanov岛的OMVPE研究进展
Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198) Pub Date : 2001-05-14 DOI: 10.1109/ICIPRM.2001.929027
V. Williams, A. Schremer, Y. Naito-Yamada, J. Ballantyne
{"title":"Progress on the OMVPE of GaInP Stranski-Krastanov islands on GaP/Si substrates","authors":"V. Williams, A. Schremer, Y. Naito-Yamada, J. Ballantyne","doi":"10.1109/ICIPRM.2001.929027","DOIUrl":"https://doi.org/10.1109/ICIPRM.2001.929027","url":null,"abstract":"Optical interconnects to the silicon chip could greatly increase data transmission rates and lower power consumption for off-chip communications. Our group is researching a method by which direct-bandgap GaInP Stranski-Krastanov islands with low defect densities could be monolithically integrated with silicon electronics using selective area organometallic vapor phase epitaxy (OMVPE). Recently, optical material was successfully deposited on GaP/Si substrates, and the photoluminescence results from GaInP/GaP/Si structures are presented for the first time. The nucleation of GaInP islands on GaP substrates and the luminescence quality of devices fabricated from this material system were also investigated. The performance of waveguide structures was measured and is described. During the testing of the GaInP/GaP samples, a degradation in luminescence intensity as a result of UV irradiation was observed. Photoluminescence spectra show a dramatic decrease in emission intensity as a function of exposure time.","PeriodicalId":403484,"journal":{"name":"Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129772942","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Dark current reduction of avalanche photodiode using asymmetric InGaAsP/InAlAs superlattice structure 利用不对称InGaAsP/InAlAs超晶格结构降低雪崩光电二极管暗电流
Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198) Pub Date : 2001-05-14 DOI: 10.1109/ICIPRM.2001.929065
A. Suzuki, A. Yamada, T. Yokotsuka, K. Idota, Y. Ohki
{"title":"Dark current reduction of avalanche photodiode using asymmetric InGaAsP/InAlAs superlattice structure","authors":"A. Suzuki, A. Yamada, T. Yokotsuka, K. Idota, Y. Ohki","doi":"10.1109/ICIPRM.2001.929065","DOIUrl":"https://doi.org/10.1109/ICIPRM.2001.929065","url":null,"abstract":"We studied dark current reduction in an avalanche photodiode using an asymmetric InGaAsP/InAlAs superlattice structure, which was fabricated by gas-source molecular beam epitaxy. Band-to-band tunneling current, which dominates the dark current properties, was suppressed by increasing the effective band gap energy of the asymmetric superlattice multiplication layer. The dark current for the sample with the thickest barrier and thinnest well thickness is the lowest among the samples at any multiplication factor. In this sample, the dark current value at M=10 was 0.4 /spl mu/A. This is the smallest value reported of dark current for InGaAsP/InAlAs SL-APD. It is found that adopting an asymmetric superlattice structure decreases the electric field for the multiplication layer and improves dark current properties.","PeriodicalId":403484,"journal":{"name":"Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129937240","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Investigation of InP epitaxial films on GaAs substrate grown by chloride vapor phase epitaxy 氯化物气相外延生长GaAs衬底上InP外延膜的研究
Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198) Pub Date : 2001-05-14 DOI: 10.1109/ICIPRM.2001.929118
S. Sawada, S. Matsukawa, T. Iwasaki, Y. Miura, M. Yokogawa
{"title":"Investigation of InP epitaxial films on GaAs substrate grown by chloride vapor phase epitaxy","authors":"S. Sawada, S. Matsukawa, T. Iwasaki, Y. Miura, M. Yokogawa","doi":"10.1109/ICIPRM.2001.929118","DOIUrl":"https://doi.org/10.1109/ICIPRM.2001.929118","url":null,"abstract":"InP epitaxial films are grown on GaAs substrates by chloride vapor phase epitaxy (C-VPE). Good surface morphology is obtained. TEM observations of the cross-section of InP films show that dislocations generated at the interface between the substrate and the film gradually disappears towards the top surface of InP layers. This report demonstrates the possibility of large-diameter, less-fragile substrates suitable for InP epitaxial growth for high-speed devices such as HEMTs and HBTs.","PeriodicalId":403484,"journal":{"name":"Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130613853","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Formation of GaInNAs/GaAs densely packed quantum dots by chemical beam epitaxy 化学束外延形成GaInNAs/GaAs密集堆积量子点
Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198) Pub Date : 2001-05-14 DOI: 10.1109/ICIPRM.2001.929026
S. Makino, T. Miyamoto, T. Kageyama, Y. Ikenaga, F. Koyama, K. Iga
{"title":"Formation of GaInNAs/GaAs densely packed quantum dots by chemical beam epitaxy","authors":"S. Makino, T. Miyamoto, T. Kageyama, Y. Ikenaga, F. Koyama, K. Iga","doi":"10.1109/ICIPRM.2001.929026","DOIUrl":"https://doi.org/10.1109/ICIPRM.2001.929026","url":null,"abstract":"The GaInNAs/GaAs quantum dot (QD) system is expected to extend the emission wavelength of GaAs-based lasers. We successfully formed GaInNAs QDs by chemical beam epitaxy (CBE). The growth temperature dependence of the size and density of GaInNAs QDs was quite different from GaInAs QDs. It was found that the size of GaInAs QDs increased and density decreased with increasing growth temperature from 500/spl deg/C to 540/spl deg/C. On the other hand, GaInNAs QDs showed a small change of size and density. A density of about 9/spl times/10/sup 10/ cm/sup -2/ was obtained for GaInNAs QDs at 540/spl deg/C which is three times larger than that of GaInAs QDs. Thus, nitrogen introduction into the QDs provides a novel control technique of dot size and density.","PeriodicalId":403484,"journal":{"name":"Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198)","volume":"38 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130636884","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
InP-based VCSELs for 1.55 /spl mu/m wavelength range 基于inp的vcsel波长范围为1.55 /spl mu/m
Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198) Pub Date : 2001-05-14 DOI: 10.1109/ICIPRM.2001.929006
M. Amann
{"title":"InP-based VCSELs for 1.55 /spl mu/m wavelength range","authors":"M. Amann","doi":"10.1109/ICIPRM.2001.929006","DOIUrl":"https://doi.org/10.1109/ICIPRM.2001.929006","url":null,"abstract":"We present a new approach for InP-based long-wavelength VCSELs based on buried tunnel junctions. Excellent cw laser performance has been demonstrated for the 1.45-1.85 /spl mu/m wavelength range, such as sub-mA threshold currents, 0.9 V threshold voltage (at /spl lambda/=1.55 /spl mu/m), 30-100 /spl Omega/ series resistance, differential efficiencies >25%, 90/spl deg/C cw operation, stable polarization and single-mode operation with SSR of the order 50 dB.","PeriodicalId":403484,"journal":{"name":"Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198)","volume":"16 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133032987","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Low-damage etched/regrown interfaces of GaInAsP/InP wirelike laser with strain-compensated MQW structure 具有应变补偿MQW结构的GaInAsP/InP线状激光器的低损伤蚀刻/再生界面
Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198) Pub Date : 2001-05-14 DOI: 10.1109/ICIPRM.2001.929020
Hideki Midorikawa, N. Nunoya, K. Muranushi, S. Tamura, S. Arai
{"title":"Low-damage etched/regrown interfaces of GaInAsP/InP wirelike laser with strain-compensated MQW structure","authors":"Hideki Midorikawa, N. Nunoya, K. Muranushi, S. Tamura, S. Arai","doi":"10.1109/ICIPRM.2001.929020","DOIUrl":"https://doi.org/10.1109/ICIPRM.2001.929020","url":null,"abstract":"To evaluate etched/regrown interfaces of strain-compensated GaInAsP/InP five-quantum-well wirelike lasers with the wire widths of 43 nm and 70 nm fabricated by EB lithography, CH/sub 4//H/sub 2/-reactive ion etching, and organo-metallic-vapor-phase-epitaxy regrowth, temperature dependences of the threshold current density, the spontaneous emission spectrum and efficiency were compared with those of un-etched quantum-well lasers. As a result, the product of the surface recombination velocity and the carrier lifetime S/spl middot//spl tau/ at the etched/regrown interfaces was evaluated to be less than 2 nm at room temperature. No degradation in the spontaneous emission efficiency was observed within the measured temperature range up to 85/spl deg/C for both lasers. These results indicate that high quality etched/regrown interfaces can be obtained with GsInAsP/InP fine structures.","PeriodicalId":403484,"journal":{"name":"Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198)","volume":"133 5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130946833","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Ultra-fast electroabsorption modulator integrated DFB lasers 超快电吸收调制器集成DFB激光器
Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198) Pub Date : 2001-05-14 DOI: 10.1109/ICIPRM.2001.929151
H. Takeuchi
{"title":"Ultra-fast electroabsorption modulator integrated DFB lasers","authors":"H. Takeuchi","doi":"10.1109/ICIPRM.2001.929151","DOIUrl":"https://doi.org/10.1109/ICIPRM.2001.929151","url":null,"abstract":"We have developed two types of high-speed electroabsorption modulator integrated DFB lasers operating at 40 gbit/s and higher. A small modulator length of 90 /spl mu/m with a lumped-electrode results in the 40-Gbit/s operation. A traveling-wave electrode electroabsorption modulator integrated DFB laser achieves a bandwidth much higher than 50 GHz.","PeriodicalId":403484,"journal":{"name":"Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198)","volume":"53 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132285205","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 9
Temperature stable wavelength TlInGaAs/InP DH LEDs grown by gas source MBE 气源MBE生长温度稳定波长的TlInGaAs/InP DH led
Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198) Pub Date : 2001-05-14 DOI: 10.1109/ICIPRM.2001.929029
H. Lee, K. Konishi, O. Maeda, A. Mizobata, K. Asami, H. Asahi
{"title":"Temperature stable wavelength TlInGaAs/InP DH LEDs grown by gas source MBE","authors":"H. Lee, K. Konishi, O. Maeda, A. Mizobata, K. Asami, H. Asahi","doi":"10.1109/ICIPRM.2001.929029","DOIUrl":"https://doi.org/10.1109/ICIPRM.2001.929029","url":null,"abstract":"TlInGaAs/InP double heterostructure (DH) light emitting diodes (LEDs) were grown on [100] InP substrates by gas source molecular beam epitaxy. The Tl composition was 6%. They were operated up to 340 K in the wavelength range of 1.58 /spl mu/m. Very small temperature variation in the electroluminescence (EL) peak energy (-0.09 meV/K) was observed, similar to the temperature variation of photoluminescence (PL) peak energy.","PeriodicalId":403484,"journal":{"name":"Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198)","volume":"33 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132192880","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Integration of complementary NPN and PNP InAlAs/InGaAs HBTs 整合互补的NPN和PNP InAlAs/InGaAs HBTs
Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198) Pub Date : 2001-05-14 DOI: 10.1109/ICIPRM.2001.929188
D. Cui, D. Pavlidis, D. Sawdai, P. Chin, T. Block
{"title":"Integration of complementary NPN and PNP InAlAs/InGaAs HBTs","authors":"D. Cui, D. Pavlidis, D. Sawdai, P. Chin, T. Block","doi":"10.1109/ICIPRM.2001.929188","DOIUrl":"https://doi.org/10.1109/ICIPRM.2001.929188","url":null,"abstract":"In this work, monolithic integration of NPN and PNP InAlAs/InGaAs complementary HBTs was demonstrated using a regrowth approach by MBE. The integrated HBTs showed little degradation over similar discrete devices. The DC gain was 35 for both integrated NPN and PNP HBTs. f/sub T/ of 79.6 GHz and f/sub max/ of 109 GHz were achieved for NPN devices while f/sub T/ of 11.6 GHz and f/sub max/ of 22.6 GHz were achieved for PNP devices.","PeriodicalId":403484,"journal":{"name":"Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198)","volume":"465 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132984592","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
InP/InGaAs/InP double heterojunction bipolar transistors with 300 GHz F/sub max/ InP/InGaAs/InP双异质结双极晶体管，F/sub max/ 300 GHz
Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198) Pub Date : 2001-05-14 DOI: 10.1109/ICIPRM.2001.929011
S. Krishnan, M. Dahlstrom, T. Mathew, Y. Wei, D. Scott, M. Urteaga, M. Rodwell, W.K. Liu, D. Lubyshev, X. Fang, Y. Wu
{"title":"InP/InGaAs/InP double heterojunction bipolar transistors with 300 GHz F/sub max/","authors":"S. Krishnan, M. Dahlstrom, T. Mathew, Y. Wei, D. Scott, M. Urteaga, M. Rodwell, W.K. Liu, D. Lubyshev, X. Fang, Y. Wu","doi":"10.1109/ICIPRM.2001.929011","DOIUrl":"https://doi.org/10.1109/ICIPRM.2001.929011","url":null,"abstract":"We report InP/InGaAs/InP Double Heterojunction Transistors (DHBTs) with high breakdown voltages in a substrate transfer process. A device with a 400 /spl Aring/ thick graded base, a 500 /spl Aring/ chirped superlattice base-collector grade and a 2500 /spl Aring/ thick InP collector exhibits f/sub /spl tau//=165 GHz and f/sub max/=300 GHz with breakdown voltage BV/sub CEO/=6 V at a current density, J/sub e/=1/spl middot/10/sup 5/ A/cm/sup 2/. A device with a 400 /spl Aring/ thick graded base, a 500 /spl Aring/ chirped superlattice base-collector grade and a 1500 /spl Aring/ thick InP collector exhibits f/sub /spl tau//=215 GHz and f/sub max/=210 GHz with breakdown voltage BV/sub CEO/=4 V at a current density, J/sub e/=1/spl middot/10/sup 5/ A/cm/sup 2/.","PeriodicalId":403484,"journal":{"name":"Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198)","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116740233","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
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