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Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198)最新文献

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High performance, high yield InP DHBT production process for 40 Gbps applications 高性能，高产量的InP DHBT生产工艺，适用于40 Gbps应用
Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198) Pub Date : 2001-05-14 DOI: 10.1109/ICIPRM.2001.929186
D. Sawdai, E. Kaneshiro, A. Gutierrez-Aitken, P. Grossman, K. Sato, W. Kim, G. Leslie, J. Eldredge, T. Block, P. Chin, L. Tran, A. Oki, D. Streit
{"title":"High performance, high yield InP DHBT production process for 40 Gbps applications","authors":"D. Sawdai, E. Kaneshiro, A. Gutierrez-Aitken, P. Grossman, K. Sato, W. Kim, G. Leslie, J. Eldredge, T. Block, P. Chin, L. Tran, A. Oki, D. Streit","doi":"10.1109/ICIPRM.2001.929186","DOIUrl":"https://doi.org/10.1109/ICIPRM.2001.929186","url":null,"abstract":"High-speed digital logic is essential in diverse applications such as optical communication, frequency synthesizers, and analog-digital conversion. Current research efforts indicate that technologies utilizing heterojunction bipolar transistors (HBTs) are the preferred approach for systems operating at clock frequencies of 40 GHz and above. This need for higher performance electronics for space and defense applications has driven the development of InP HBTs at TRW. Consistent and continuous improvements from the baseline MBE structure and process technology have enhanced frequency performance, breakdown voltage, producibility, yield, reliability such that InP HBTs are being used successfully for many commercial, space, and defense applications. This paper describes our optimized high-yield production InP DHBT process which simultaneously combines f/sub T/>170 GHz, f/sub max/>190 GHz, and breakdown voltage /spl sim/7 V.","PeriodicalId":403484,"journal":{"name":"Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198)","volume":"35 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117268194","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 24
Highly reliable InGaAsP/InP lasers with defect-free regrowth interfaces formed by newly composed HBr-based solutions 高可靠性的InGaAsP/InP激光器，其无缺陷再生界面由新组成的hbr基溶液形成
Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198) Pub Date : 2001-05-14 DOI: 10.1109/ICIPRM.2001.929145
K. Shinoda, A. Taike, H. Sato, H. Uchiyama
{"title":"Highly reliable InGaAsP/InP lasers with defect-free regrowth interfaces formed by newly composed HBr-based solutions","authors":"K. Shinoda, A. Taike, H. Sato, H. Uchiyama","doi":"10.1109/ICIPRM.2001.929145","DOIUrl":"https://doi.org/10.1109/ICIPRM.2001.929145","url":null,"abstract":"The reliability of buried heterostructure laser diodes (BHLDs) that have a dry-etched mesa structure has been improved by about ten times by using optimized HBr-based wet chemical etchants. This improved reliability was achieved by reducing the amount of defects at the regrowth interfaces by using a newly optimized HBr-Br/sub 2/-H/sub 2/O solution with a composition range from 0.30 M HBr/0.022 M Br/sub 2/ to 0.50 M HBr/0.020 M Br/sub 2/. Solutions in this range produce the same etching rates of the (1~10) InP cladding layers and the (1~10) InGaAsP multi-quantum-well active layer. The etching mechanism of the InGaAsP/InP material system in the HBr-Br/sub 2/-H/sub 2/O solutions was found to be an oxide-dissolution reaction.","PeriodicalId":403484,"journal":{"name":"Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198)","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116743835","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Feasibility of rapid thermal MOCVD growth for fabrication of InP-based heterostructures 快速热MOCVD生长制备inp基异质结构的可行性
Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198) Pub Date : 2001-05-14 DOI: 10.1109/ICIPRM.2001.929143
O. Kreinin, G. Bahir
{"title":"Feasibility of rapid thermal MOCVD growth for fabrication of InP-based heterostructures","authors":"O. Kreinin, G. Bahir","doi":"10.1109/ICIPRM.2001.929143","DOIUrl":"https://doi.org/10.1109/ICIPRM.2001.929143","url":null,"abstract":"Semiconductor lasers require the growth of an \"active\" multi-layer heterostructure, a subsequent definition of the lateral waveguide feature and re-growth of a burying semi-insulating layer. Here we demonstrate a feasibility of Rapid Thermal Metal Organic Chemical Vapor Deposition (RT-MOCVD) approach as a way to carry out of the various processes associated with the integrated manufacturing of InP-based laser devices: in situ cleaning and preservation of the InP substrates; III-V semiconductor layer deposition; Growth of the quantum well structures; Selective growth of InP and InGaAs using an ion implanted mask-less definition for the selective epitaxy; in situ Rapid Thermal Annealing of the ion implanted damaged area; Re-growth of InP:Fe semi-insulating burying layer on the primary \"masked surface\".","PeriodicalId":403484,"journal":{"name":"Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116254159","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Perspective for large semi-insulating indium phosphide substrates 大型半绝缘磷化铟衬底展望
Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198) Pub Date : 2001-05-14 DOI: 10.1109/ICIPRM.2001.929033
W. Ware
{"title":"Perspective for large semi-insulating indium phosphide substrates","authors":"W. Ware","doi":"10.1109/ICIPRM.2001.929033","DOIUrl":"https://doi.org/10.1109/ICIPRM.2001.929033","url":null,"abstract":"The increasing use of InP for microwave and millimeter wave devices requires an assured supply of good quality 3 inch and 100 mm semi-insulating substrates. This paper considers the current availability of such wafers, the raw material situation and the properties of wafers grown by different processes. It includes a detailed discussion of ingot annealing and the advantages it offers in terms of material uniformity and reduced breakages. It is suggested that the improvement in electrical uniformity is obtained by the redistribution of the defect V/sub In/-H/sub 4/. Improvements in quality and reduction in price should occur as production volume increases.","PeriodicalId":403484,"journal":{"name":"Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198)","volume":"51 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114172404","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
In-situ etching of InP based BH laser structures in MOVPE 在MOVPE中原位刻蚀InP基BH激光结构
Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198) Pub Date : 2001-05-14 DOI: 10.1109/ICIPRM.2001.929142
R. Gessner, A. Guy, E. Veuhoff, B. Borchert, S. Illek, M. Schier, G. Wenger
{"title":"In-situ etching of InP based BH laser structures in MOVPE","authors":"R. Gessner, A. Guy, E. Veuhoff, B. Borchert, S. Illek, M. Schier, G. Wenger","doi":"10.1109/ICIPRM.2001.929142","DOIUrl":"https://doi.org/10.1109/ICIPRM.2001.929142","url":null,"abstract":"Tertiarybutylchloride (TBCl) was used for etching of InP based buried heterostructure (BH) laser ridges in an MOVPE system. Applying this in-situ technique with subsequent regrowth will increase process yield and reliability. Etch rates are directly proportional to the TBCl flow. Increasing the hydrogen carrier gas flow yields decreased etch rates, these can be increased at higher temperatures. An excellent surface morphology is essential. This can be obtained under conditions favoring a high surface diffusion. It was found that a PH/sub 3/-free etching process at 580 /spl deg/C leads to best results both, for InP and GaInAsP layers. An increasing Ga content decreases the etch rate, especially in a PH/sub 3/-free process. Smooth {111} planes are formed during TBCl etching under optimized conditions. For the first time this process was successfully utilized to produce BH lasers. Device data along with reliability data are comparable with data from devices fabricated by the conventional ex-situ etching process.","PeriodicalId":403484,"journal":{"name":"Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198)","volume":"51 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126131714","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Room temperature negative differential resistance with high peak-to-valley current ratio of CdF/sub 2//CaF/sub 2/ resonant tunneling diode on silicon CdF/sub - 2//CaF/sub - 2/硅谐振隧道二极管具有高峰谷电流比的室温负差分电阻
Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198) Pub Date : 2001-05-14 DOI: 10.1109/ICIPRM.2001.929103
M. Watanabe, N. Sakamaki, T. Ishikawa
{"title":"Room temperature negative differential resistance with high peak-to-valley current ratio of CdF/sub 2//CaF/sub 2/ resonant tunneling diode on silicon","authors":"M. Watanabe, N. Sakamaki, T. Ishikawa","doi":"10.1109/ICIPRM.2001.929103","DOIUrl":"https://doi.org/10.1109/ICIPRM.2001.929103","url":null,"abstract":"We have demonstrated room temperature negative differential resistance with a high peak-to-valley ratio of nearly 10/sup 6/ using CdF/sub 2//CaF/sub 2/ double barrier resonant tunneling diode (DBRTD) structures grown on a Si(111) substrate. Fluctuation of layer thickness is evaluated at /spl plusmn/lTL (tri-layer=0.31 nm) for each layer. The I-V curves are reasonably dependent on the layer thickness of the CdF/sub 2/ quantum-well.","PeriodicalId":403484,"journal":{"name":"Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198)","volume":"41 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124812712","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Characterization of photonic crystal cavities: investigation on the coupling between microresonators and waveguides 光子晶体腔的表征:微谐振腔与波导耦合的研究
Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198) Pub Date : 2001-05-14 DOI: 10.1109/ICIPRM.2001.929032
P. Pottier, X. Letartre, C. Seassal, C. Grillet, P. Rojo-Romero, P. Viktorovitch, M. Le Vassor d'Yerville, D. Cassagne, C. Jouanin
{"title":"Characterization of photonic crystal cavities: investigation on the coupling between microresonators and waveguides","authors":"P. Pottier, X. Letartre, C. Seassal, C. Grillet, P. Rojo-Romero, P. Viktorovitch, M. Le Vassor d'Yerville, D. Cassagne, C. Jouanin","doi":"10.1109/ICIPRM.2001.929032","DOIUrl":"https://doi.org/10.1109/ICIPRM.2001.929032","url":null,"abstract":"In this work, we report on properties of two-dimensional photonic crystal (2D PC) based microcavities fabricated on InP suspended membranes. Their characterization is based on the observation of diffracted photoluminescence (PL). Comparison is made with theoretical calculations obtained by a plane wave method. In section I, the samples fabrication and the characterization methods are described. In section II, we investigate the influence of the PC surfacic air filling factor (f) on the spectral properties of PC defect cavities. Section III is about the analysis of single line defect waveguides designed as a closed cavity. First results on the coupling between a cavity and a waveguide are lastly shown in section IV.","PeriodicalId":403484,"journal":{"name":"Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198)","volume":"49 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125079543","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Selective formation of InAs single and multiple quantum dots on GaAs wire structures for application of single electron memory 在GaAs线结构上选择性形成InAs单量子点和多量子点用于单电子存储器
Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198) Pub Date : 2001-05-14 DOI: 10.1109/ICIPRM.2001.929135
J. Motohisa, T. Terasawa, T. Kusuhara, F. Nakajima, T. Fukui
{"title":"Selective formation of InAs single and multiple quantum dots on GaAs wire structures for application of single electron memory","authors":"J. Motohisa, T. Terasawa, T. Kusuhara, F. Nakajima, T. Fukui","doi":"10.1109/ICIPRM.2001.929135","DOIUrl":"https://doi.org/10.1109/ICIPRM.2001.929135","url":null,"abstract":"We describe formation of self-assembling InAs quantum dots (QDs) combined with selective area metalorganic vapor phase epitaxy (SA-MOVPE) on masked [001] GaAs substrates. It was found that formation of QDs in SA-MOVPE depended on the direction and top width of the GaAs mesa and wire structures. In particular, surface steps, which are mainly formed at the edge of the [001] top surface, affect the formation of QDs. Such step-induced islanding is utilized to form a position controlled single InAs QD at the bend of the wires in two directions. We also discuss a possible application of QDs for single electron memories where position-controlled QDs are used in combination with ridge quantum wires realized by the SA-MOVPE technology.","PeriodicalId":403484,"journal":{"name":"Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198)","volume":"328 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121836912","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Numerical analysis of polarization sensitivity in strained bulk semiconductor optical amplifiers 应变体半导体光放大器偏振灵敏度的数值分析
Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198) Pub Date : 2001-05-14 DOI: 10.1109/ICIPRM.2001.929183
T. Kakitsuka, Y. Shibata, M. Itoh, Y. Tohmori, Y. Yoshikuni
{"title":"Numerical analysis of polarization sensitivity in strained bulk semiconductor optical amplifiers","authors":"T. Kakitsuka, Y. Shibata, M. Itoh, Y. Tohmori, Y. Yoshikuni","doi":"10.1109/ICIPRM.2001.929183","DOIUrl":"https://doi.org/10.1109/ICIPRM.2001.929183","url":null,"abstract":"Polarization dependence in 1.55-/spl mu/m SOAs based on tensile-strained bulk InGaAsP is analyzed numerically, focusing on strain relaxation in the active layer. We demonstrate that the strain introduced during the epitaxial growth of the active layer is reduced due to the InP-buried structure. The polarization dependence of the gain is calculated by using the k/spl middot/p method taking strain relaxation into account and compared with experimental results. The change of strain has non-negligible effects that have to be considered in choosing of the strain for polarization independence of the gain.","PeriodicalId":403484,"journal":{"name":"Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198)","volume":"26 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123322290","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Integration of heterostructure bipolar transistor and electroabsorption waveguide modulator based on a multifunctional layer design for 1.55 /spl mu/m 基于1.55 /spl mu/m多功能层设计的异质结构双极晶体管与电吸收波导调制器集成
Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198) Pub Date : 2001-05-14 DOI: 10.1109/ICIPRM.2001.929168
T. Reimann, M. Schneider, P. Velling, S. Neumann, M. Agethen, R. Bertenburg, R. Heinzelmann, A. Stohr, D. Jager, F. Tegude
{"title":"Integration of heterostructure bipolar transistor and electroabsorption waveguide modulator based on a multifunctional layer design for 1.55 /spl mu/m","authors":"T. Reimann, M. Schneider, P. Velling, S. Neumann, M. Agethen, R. Bertenburg, R. Heinzelmann, A. Stohr, D. Jager, F. Tegude","doi":"10.1109/ICIPRM.2001.929168","DOIUrl":"https://doi.org/10.1109/ICIPRM.2001.929168","url":null,"abstract":"An electroabsorption waveguide modulator (EAM) for 1.55 /spl mu/m is embedded into the layer-stack of a heterostructure bipolar transistor (HBT). The collector consists of a complete optical waveguide and enables the monolithic integration of modulators, transistors and also a new merged device to result in a modulator with integrated amplifier. At present this device offers a 3 dB cut-off frequency for optical modulation of 7 GHz and for pure electrical operation cut-off frequencies of f/sub T/ and f/sub max/ both of about 25 GHz.","PeriodicalId":403484,"journal":{"name":"Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198)","volume":"24 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115020085","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
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