CdF/sub - 2//CaF/sub - 2/硅谐振隧道二极管具有高峰谷电流比的室温负差分电阻

Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198) Pub Date : 2001-05-14 DOI:10.1109/ICIPRM.2001.929103

M. Watanabe, N. Sakamaki, T. Ishikawa

{"title":"CdF/sub - 2//CaF/sub - 2/硅谐振隧道二极管具有高峰谷电流比的室温负差分电阻","authors":"M. Watanabe, N. Sakamaki, T. Ishikawa","doi":"10.1109/ICIPRM.2001.929103","DOIUrl":null,"url":null,"abstract":"We have demonstrated room temperature negative differential resistance with a high peak-to-valley ratio of nearly 10/sup 6/ using CdF/sub 2//CaF/sub 2/ double barrier resonant tunneling diode (DBRTD) structures grown on a Si(111) substrate. Fluctuation of layer thickness is evaluated at /spl plusmn/lTL (tri-layer=0.31 nm) for each layer. The I-V curves are reasonably dependent on the layer thickness of the CdF/sub 2/ quantum-well.","PeriodicalId":403484,"journal":{"name":"Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198)","volume":"41 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2001-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Room temperature negative differential resistance with high peak-to-valley current ratio of CdF/sub 2//CaF/sub 2/ resonant tunneling diode on silicon\",\"authors\":\"M. Watanabe, N. Sakamaki, T. Ishikawa\",\"doi\":\"10.1109/ICIPRM.2001.929103\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We have demonstrated room temperature negative differential resistance with a high peak-to-valley ratio of nearly 10/sup 6/ using CdF/sub 2//CaF/sub 2/ double barrier resonant tunneling diode (DBRTD) structures grown on a Si(111) substrate. Fluctuation of layer thickness is evaluated at /spl plusmn/lTL (tri-layer=0.31 nm) for each layer. The I-V curves are reasonably dependent on the layer thickness of the CdF/sub 2/ quantum-well.\",\"PeriodicalId\":403484,\"journal\":{\"name\":\"Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198)\",\"volume\":\"41 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2001-05-14\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICIPRM.2001.929103\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIPRM.2001.929103","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

我们使用生长在Si(111)衬底上的CdF/sub 2//CaF/sub 2/双势垒谐振隧道二极管(DBRTD)结构，证明了室温负差分电阻的峰谷比接近10/sup 6/。每层的层厚波动值为/spl plusmn/lTL(三层=0.31 nm)。I-V曲线合理地依赖于CdF/ sub2 /量子阱的层厚。

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Room temperature negative differential resistance with high peak-to-valley current ratio of CdF/sub 2//CaF/sub 2/ resonant tunneling diode on silicon

We have demonstrated room temperature negative differential resistance with a high peak-to-valley ratio of nearly 10/sup 6/ using CdF/sub 2//CaF/sub 2/ double barrier resonant tunneling diode (DBRTD) structures grown on a Si(111) substrate. Fluctuation of layer thickness is evaluated at /spl plusmn/lTL (tri-layer=0.31 nm) for each layer. The I-V curves are reasonably dependent on the layer thickness of the CdF/sub 2/ quantum-well.

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Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198)

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