基于1.55 /spl mu/m多功能层设计的异质结构双极晶体管与电吸收波导调制器集成

Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198) Pub Date : 2001-05-14 DOI:10.1109/ICIPRM.2001.929168

T. Reimann, M. Schneider, P. Velling, S. Neumann, M. Agethen, R. Bertenburg, R. Heinzelmann, A. Stohr, D. Jager, F. Tegude

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引用次数: 7

摘要

将1.55 /spl mu/m的电吸收波导调制器(EAM)嵌入到异质结构双极晶体管(HBT)的层栈中。该集电极由一个完整的光波导组成，可以将调制器、晶体管和一个新的合并器件进行单片集成，从而形成一个具有集成放大器的调制器。目前，该器件为7 GHz的光调制提供了3 dB截止频率，为25 GHz左右的f/sub T/和f/sub max/纯电气操作提供了3 dB截止频率。

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Integration of heterostructure bipolar transistor and electroabsorption waveguide modulator based on a multifunctional layer design for 1.55 /spl mu/m

An electroabsorption waveguide modulator (EAM) for 1.55 /spl mu/m is embedded into the layer-stack of a heterostructure bipolar transistor (HBT). The collector consists of a complete optical waveguide and enables the monolithic integration of modulators, transistors and also a new merged device to result in a modulator with integrated amplifier. At present this device offers a 3 dB cut-off frequency for optical modulation of 7 GHz and for pure electrical operation cut-off frequencies of f/sub T/ and f/sub max/ both of about 25 GHz.

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Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198)

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