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Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198)最新文献

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Tunable semiconductor lasers for WDM telecommunications 波分复用通信用可调谐半导体激光器
Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198) Pub Date : 2001-05-14 DOI: 10.1109/ICIPRM.2001.929214
D. Ackerman, J.E. Johnson, L. Ketelsen, J. Geary, W. Asous, F. Walters, J. Freund, M. Hybertsen, K. Glogovsky, C. W. Lentz, C. Reynolds, R. Bylsma, E. Dean, T. Koch
{"title":"Tunable semiconductor lasers for WDM telecommunications","authors":"D. Ackerman, J.E. Johnson, L. Ketelsen, J. Geary, W. Asous, F. Walters, J. Freund, M. Hybertsen, K. Glogovsky, C. W. Lentz, C. Reynolds, R. Bylsma, E. Dean, T. Koch","doi":"10.1109/ICIPRM.2001.929214","DOIUrl":"https://doi.org/10.1109/ICIPRM.2001.929214","url":null,"abstract":"Wavelength selectable semiconductor lasers serve as tunable light sources in wavelength division multiplexed telecommunication systems. We report on 2.5 and 10 Gb/s electro-absorption modulated wavelength selectable laser modules based on highly reliable, closed-loop controlled, five-section InP wavelength selectable lasers.","PeriodicalId":403484,"journal":{"name":"Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198)","volume":"76 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127064023","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Recent development of microdisk lasers and waveguides 微磁盘激光器和波导的最新发展
Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198) Pub Date : 2001-05-14 DOI: 10.1109/ICIPRM.2001.929019
T. Baba
{"title":"Recent development of microdisk lasers and waveguides","authors":"T. Baba","doi":"10.1109/ICIPRM.2001.929019","DOIUrl":"https://doi.org/10.1109/ICIPRM.2001.929019","url":null,"abstract":"Recent progress of microdisk lasers and related components are summarized. Microdisk lasers achieve the record low threshold and large spontaneous emission factor by a very simple cavity. The behavior of lasing modes can be investigated using the near field probing technology. The microdisk waveguide is demonstrated with low propagation loss.","PeriodicalId":403484,"journal":{"name":"Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198)","volume":"111 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124053131","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Realization of submicron-pitch linear arrays of nanometer-sized InGaAs ridge quantum wires by selective MBE growth on patterned InP substrates 在图像化InP衬底上选择性MBE生长实现纳米InGaAs脊量子线亚微米间距线性阵列
Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198) Pub Date : 2001-05-14 DOI: 10.1109/ICIPRM.2001.929136
C. Jiang, T. Muranaka, H. Hasegawa
{"title":"Realization of submicron-pitch linear arrays of nanometer-sized InGaAs ridge quantum wires by selective MBE growth on patterned InP substrates","authors":"C. Jiang, T. Muranaka, H. Hasegawa","doi":"10.1109/ICIPRM.2001.929136","DOIUrl":"https://doi.org/10.1109/ICIPRM.2001.929136","url":null,"abstract":"By optimizing the whole growth process systematically, submicron-pitch linear arrays of nanometer-sized InGaAs ridge quantum wires (QWRs) were successfully realized by selective MBE on patterned InP substrates. Uniformity of QWR arrays was markedly improved by employing pre-growth etching, native oxide removal by atomic hydrogen cleaning, and optimization of V/III ratio. High optical quality of the fabricated submicron-pitch nanometer-sized InGaAs ridge QWR arrays was confirmed by achievement of an intense and narrow single PL emission peak with a peak width (FWHM) as small as 23 meV. As compared with the previous 4 /spl mu/m pitch arrays, the PL peak of the submicron-pitch arrays showed a large blue shift of more than 100 meV with respect to that from a reference planar QW grown simultaneously.","PeriodicalId":403484,"journal":{"name":"Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126740583","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Business impact of optical devices on Internet 光设备对互联网业务的影响
Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198) Pub Date : 2001-05-14 DOI: 10.1109/ICIPRM.2001.929003
M. Fukuta
{"title":"Business impact of optical devices on Internet","authors":"M. Fukuta","doi":"10.1109/ICIPRM.2001.929003","DOIUrl":"https://doi.org/10.1109/ICIPRM.2001.929003","url":null,"abstract":"Demand for system capacity for the Internet is increasing at an exponential rate. The only way to handle this explosion in demand will be to set up optical multiplexing communications trunk networks such as DWDM (Dense Wavelength Division Multiplexing) throughout the world. In this paper, recent developments in optical devices used for DWDM systems and the business impact of these devices on the Internet are discussed.","PeriodicalId":403484,"journal":{"name":"Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198)","volume":"55 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126766975","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Transmission characteristics of 1.3 /spl mu/m Fabry-Perot laser diodes integrated with spot size converter for 2.5 Gbit/s applications 集成光斑尺寸转换器的1.3 /spl μ l /m法布里-珀罗激光二极管在2.5 Gbit/s应用中的传输特性
Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198) Pub Date : 2001-05-14 DOI: 10.1109/ICIPRM.2001.929009
N. Bouadma, L. Lucatero, V. Colson, F. Barthe, D. Leclerc, J. Gentner
{"title":"Transmission characteristics of 1.3 /spl mu/m Fabry-Perot laser diodes integrated with spot size converter for 2.5 Gbit/s applications","authors":"N. Bouadma, L. Lucatero, V. Colson, F. Barthe, D. Leclerc, J. Gentner","doi":"10.1109/ICIPRM.2001.929009","DOIUrl":"https://doi.org/10.1109/ICIPRM.2001.929009","url":null,"abstract":"This article demonstrates the application of highly efficient Fabry-Perot lasers to intra-office STM-16 fiber communication systems at the wavelength of 1.3 /spl mu/m. Low power penalty of 0.05 dB through a 12 ps/nm fiber was measured at 25/spl deg/C and 85/spl deg/C. A low coupling loss of 1 dB of a laser to a cleaved SMF fiber is achieved. This device consists of an active stripe followed by a passive intracavity spot size converter. Subsequently, this paper demonstrates the feasibility of non-perturbing intracavity tapers through the application of selective area growth and their applicability to short haul optical systems.","PeriodicalId":403484,"journal":{"name":"Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198)","volume":"93 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126216860","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Ultrahigh performance staggered lineup ("Type II") InP/GaAsSb/InP NpN DHBTs 超高性能交错排列(“II型”)InP/GaAsSb/InP NpN dhbt
Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198) Pub Date : 2001-05-14 DOI: 10.1109/ICIPRM.2001.929010
C.R. Bogonesi, M. Dvorak, O. Pitts, N. Matine, S. Watkins
{"title":"Ultrahigh performance staggered lineup (\"Type II\") InP/GaAsSb/InP NpN DHBTs","authors":"C.R. Bogonesi, M. Dvorak, O. Pitts, N. Matine, S. Watkins","doi":"10.1109/ICIPRM.2001.929010","DOIUrl":"https://doi.org/10.1109/ICIPRM.2001.929010","url":null,"abstract":"Using a conventional emitter-up triple-mesa process, we have fabricated C-doped InP/GaAsSb/InP double heterojunction bipolar transistors (DHBTs) exhibiting both f/sub T/ and f/sub MAX/=300 GHz while maintaining a breakdown voltage BV/sub CEO/=6 V. Our devices feature stable and well-behaved common-emitter DC and RF characteristics up to J/sub C/=500 kA/cm/sup 2/ without any passivation nor heatsinking. InP/GaAsSb/InP abrupt junction DHBTs couple unprecedented performance to apparent manufacturability advantages which should enable applications well beyond 40 Gb/s and challenge InP HEMTs in the 80-100 Gb/s arena.","PeriodicalId":403484,"journal":{"name":"Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198)","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127811082","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Highly reliable 40 Gb/s electroabsorption modulator grown on InP:Fe substrate 在InP:Fe衬底上生长的高可靠性40gb /s电吸收调制器
Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198) Pub Date : 2001-05-14 DOI: 10.1109/ICIPRM.2001.929165
K. Takagi, Y. Miyazaki, H. Tada, E. Ishimura, T. Aoyagi, T. Nishimura, I. Hatta, E. Omura
{"title":"Highly reliable 40 Gb/s electroabsorption modulator grown on InP:Fe substrate","authors":"K. Takagi, Y. Miyazaki, H. Tada, E. Ishimura, T. Aoyagi, T. Nishimura, I. Hatta, E. Omura","doi":"10.1109/ICIPRM.2001.929165","DOIUrl":"https://doi.org/10.1109/ICIPRM.2001.929165","url":null,"abstract":"The electroabsorption modulator with a high-mesa ridge waveguide has been fabricated on InP:Fe substrate to reduce the capacitance of electrode pads. The cut-off frequency was 40 GHz and the extinction ratio was 15 dB. The preliminary reliability test was carried out at dark state, and the estimated lifetime at 25/spl deg/C was over 1.1/spl times/10/sup 7/ hours.","PeriodicalId":403484,"journal":{"name":"Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198)","volume":"52 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133724149","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Ultra-efficient X-band and linear-efficient Ka-band power amplifiers using indium phosphide double heterojunction bipolar transistors 采用磷化铟双异质结双极晶体管的超高效x波段和线性高效ka波段功率放大器
Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198) Pub Date : 2001-05-14 DOI: 10.1109/ICIPRM.2001.929189
T. Quach, W. Okamura, A. Gutierrez-Aitken, T. Jenkins, E. Kaneshiro, L. Kehias, D. Sawdai, P. Watson, R. Welch, R. Worley, H. Yen
{"title":"Ultra-efficient X-band and linear-efficient Ka-band power amplifiers using indium phosphide double heterojunction bipolar transistors","authors":"T. Quach, W. Okamura, A. Gutierrez-Aitken, T. Jenkins, E. Kaneshiro, L. Kehias, D. Sawdai, P. Watson, R. Welch, R. Worley, H. Yen","doi":"10.1109/ICIPRM.2001.929189","DOIUrl":"https://doi.org/10.1109/ICIPRM.2001.929189","url":null,"abstract":"We report on an ultra-efficient circuit at X-band and a linear-efficient circuit at Ka-band using InP double heterojunction bipolar transistors (DHBTs). The high efficiency circuit employs a transmission line Class-E topology to achieve 61.1% PAE, 20.1-dBm output power, and 9.8-dB gain at 10 GHz. The linear efficient circuit combines four unit cells of 1.5 /spl mu/m /spl times/ 30 /spl mu/m /spl times/ 2 fingers that yielded 25.2 dBm output power, 8.4-dB linear gain, and 35.2% PAE at 28 GHz. This circuit also achieved 31 to 34 dBm output IP3.","PeriodicalId":403484,"journal":{"name":"Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198)","volume":"46 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132889317","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 8
46.9-nm wavelength-selectable arrayed DFB lasers with integrated MMI coupler and SOA 集成MMI耦合器和SOA的46.9 nm可选波长阵列DFB激光器
Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198) Pub Date : 2001-05-14 DOI: 10.1109/ICIPRM.2001.929216
H. Oohashi, Y. Shibata, Hiroyuki Ishii, Yoshihiro Kawaguchi, Y. Kondo, Yuzo Yoshikuni, Y. Tohmori
{"title":"46.9-nm wavelength-selectable arrayed DFB lasers with integrated MMI coupler and SOA","authors":"H. Oohashi, Y. Shibata, Hiroyuki Ishii, Yoshihiro Kawaguchi, Y. Kondo, Yuzo Yoshikuni, Y. Tohmori","doi":"10.1109/ICIPRM.2001.929216","DOIUrl":"https://doi.org/10.1109/ICIPRM.2001.929216","url":null,"abstract":"We have developed wavelength-selectable arrayed DFB lasers with an integrated MMI coupler and SOA for WDM systems. Arrayed DFB lasers having eight and sixteen channels of DFB lasers are fabricated. The good uniformity of the DFB lasers characteristics provides uniform threshold current with the standard deviation of 0.37 mA in the arrayed 16 DFB lasers. The lasing wavelength difference between each laser is set to 3 nm, which corresponds to wavelength tuning range with a 30-degree temperature change. Wavelength range as wide as 46.9 nm is achieved with the 16 DFB lasers with a temperature control of 30-degree.","PeriodicalId":403484,"journal":{"name":"Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198)","volume":"114 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122505142","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 44
Fabrication of InGaAsP/InP Mach-Zehnder interferometer optical amplifier switches by metalorganic vapor phase selective area epitaxy 金属有机气相选择性区域外延制备InGaAsP/InP马赫曾德尔干涉仪光放大器开关
Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198) Pub Date : 2001-05-14 DOI: 10.1109/ICIPRM.2001.929218
N. Futakuchi, X. Song, D. Miyashita, Masaki Kato, Yoshiaki Nakano
{"title":"Fabrication of InGaAsP/InP Mach-Zehnder interferometer optical amplifier switches by metalorganic vapor phase selective area epitaxy","authors":"N. Futakuchi, X. Song, D. Miyashita, Masaki Kato, Yoshiaki Nakano","doi":"10.1109/ICIPRM.2001.929218","DOIUrl":"https://doi.org/10.1109/ICIPRM.2001.929218","url":null,"abstract":"Recent ultra-fast optical-fiber communication systems require various functional optical components, such as all optical switches. We have fabricated InGaAsP/InP Mach-Zehnder interferometer optical switches monolithically integrated with semiconductor optical amplifiers (SOAs) using a single-step MOVPE selective area growth and two types of patterning and etching process. Preliminary optical switching experiment revealed large carrier-induced index change in the selective-area-grown multiple quantum well SOAs. Furthermore, all optical switching experiment has successfully been demonstrated in these fabricated devices.","PeriodicalId":403484,"journal":{"name":"Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198)","volume":"84 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116958442","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 10
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