超高性能交错排列(“II型”)InP/GaAsSb/InP NpN dhbt

Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198) Pub Date : 2001-05-14 DOI:10.1109/ICIPRM.2001.929010

C.R. Bogonesi, M. Dvorak, O. Pitts, N. Matine, S. Watkins

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引用次数: 3

摘要

利用传统的发射源上三台工艺，我们制备了c掺杂InP/GaAsSb/InP双异质结双极晶体管(dhbt)，其f/sub T/和f/sub MAX/=300 GHz，同时保持击穿电压BV/sub CEO/=6 V。我们的器件具有稳定且性能良好的共发射极DC和RF特性，最高可达J/sub C/=500 kA/cm/sup 2/，没有任何钝化或散热。InP/GaAsSb/InP突变结dhbt将前所未有的性能与明显的可制造性优势结合在一起，这将使应用远远超过40 Gb/s，并挑战80-100 Gb/s领域的InP hemt。

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Ultrahigh performance staggered lineup ("Type II") InP/GaAsSb/InP NpN DHBTs

Using a conventional emitter-up triple-mesa process, we have fabricated C-doped InP/GaAsSb/InP double heterojunction bipolar transistors (DHBTs) exhibiting both f/sub T/ and f/sub MAX/=300 GHz while maintaining a breakdown voltage BV/sub CEO/=6 V. Our devices feature stable and well-behaved common-emitter DC and RF characteristics up to J/sub C/=500 kA/cm/sup 2/ without any passivation nor heatsinking. InP/GaAsSb/InP abrupt junction DHBTs couple unprecedented performance to apparent manufacturability advantages which should enable applications well beyond 40 Gb/s and challenge InP HEMTs in the 80-100 Gb/s arena.

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Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198)

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