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Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198)最新文献

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A model for hydrogen-induced piezoelectric effect in InP HEMTs and GaAs PHEMTs InP hemt和GaAs phemt中氢致压电效应模型
Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198) Pub Date : 2001-05-14 DOI: 10.1109/ICIPRM.2001.929172
S. Mertens, J. D. del Alamo
{"title":"A model for hydrogen-induced piezoelectric effect in InP HEMTs and GaAs PHEMTs","authors":"S. Mertens, J. D. del Alamo","doi":"10.1109/ICIPRM.2001.929172","DOIUrl":"https://doi.org/10.1109/ICIPRM.2001.929172","url":null,"abstract":"We have developed a model for the impact of the hydrogen-induced piezoelectric effect on the threshold voltage of InP HEMTs and GaAs PHEMTs. We have used 2D finite element simulations to calculate the mechanical stress caused by a gate that has expanded due to hydrogen-absorption. This has allowed us to map the piezo-electric charge distribution in the semiconductor heterostructure. We used a simple electrostatics model to calculate the impact of this piezo-electric polarization charge on the threshold voltage. We have found that the model explains experimentally observations of hydrogen-induced threshold voltage shifts, both in InP HEMTs and in GaAs PHEMTs.","PeriodicalId":403484,"journal":{"name":"Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198)","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133935099","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 31
InAs/GaAs quantum dot lasers with InGaP cladding layer grown by solid-source molecular beam epitaxy 固体源分子束外延生长InGaP包层的InAs/GaAs量子点激光器
Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198) Pub Date : 2001-05-14 DOI: 10.1109/ICIPRM.2001.929025
N. Yeh, W.-S. Liu, S. Chen, P. Chiu, J. Chyi
{"title":"InAs/GaAs quantum dot lasers with InGaP cladding layer grown by solid-source molecular beam epitaxy","authors":"N. Yeh, W.-S. Liu, S. Chen, P. Chiu, J. Chyi","doi":"10.1109/ICIPRM.2001.929025","DOIUrl":"https://doi.org/10.1109/ICIPRM.2001.929025","url":null,"abstract":"This paper presents the lasing properties of InAs/GaAs quantum dot (QD) lasers with InGaP cladding layers grown by solid-source molecular beam epitaxy. These Al-free lasers exhibit a threshold current density of 138 A/cm/sup 2/, an internal loss of 1.35 cm/sup -1/ and an internal quantum efficiency of 31% at room temperature. At low temperature, a very high characteristic temperature of 425 K and very low threshold current density of 30 A/cm/sup 2/ are measured.","PeriodicalId":403484,"journal":{"name":"Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198)","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133985867","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Electronic structures of Ga/sub 1-x/In/sub x/N/sub y/As/sub 1-y//GaAs compressively strained quantum wells Ga/sub 1-x/In/sub x/N/sub y/As/sub 1-y/ GaAs压缩应变量子阱的电子结构
Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198) Pub Date : 2001-05-14 DOI: 10.1109/ICIPRM.2001.929131
W. Fan, S. Yoon
{"title":"Electronic structures of Ga/sub 1-x/In/sub x/N/sub y/As/sub 1-y//GaAs compressively strained quantum wells","authors":"W. Fan, S. Yoon","doi":"10.1109/ICIPRM.2001.929131","DOIUrl":"https://doi.org/10.1109/ICIPRM.2001.929131","url":null,"abstract":"The electronic structures of the Ga/sub 1-x/In/sub x/N/sub y/As/sub 1-y//GaAs compressive strained quantum wells (QWs) are investigated using a 6/spl times/6 k/spl middot/p Hamiltonian including the heavy hole, light hole and spin-orbit splitting band. By varying the well width and mole fraction of N in the well material, the effects of quantum confinement and compressive strain are examined. The curves of dependence of transition energy on well width and N mole fraction are obtained. The valence subband energy dispersion curves and TE and TM squared optical transition matrix elements of three possible quantum well structures for emission at 1.3 /spl mu/m are given.","PeriodicalId":403484,"journal":{"name":"Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198)","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132296818","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
InAs nanostructure devices fabricated by AFM oxidation process AFM氧化法制备InAs纳米结构器件
Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198) Pub Date : 2001-05-14 DOI: 10.1109/ICIPRM.2001.929012
S. Sasa, M. Inoue
{"title":"InAs nanostructure devices fabricated by AFM oxidation process","authors":"S. Sasa, M. Inoue","doi":"10.1109/ICIPRM.2001.929012","DOIUrl":"https://doi.org/10.1109/ICIPRM.2001.929012","url":null,"abstract":"We describe atomic force microscope (AFM) oxidation processes developed for nanofabrication of InAs/(Al)GaSb heterostructures. The fabrication process is based on anodization that occurs between the AFM tip and the semiconductor surfaces. We systematically studied the oxidation characteristics and nanofabrication capabilities for each constituent material in order to develop a simple fabrication processes utilizing AFM oxidation. Device characteristics verifying the nanofabrication capability for each AFM oxidation process are described.","PeriodicalId":403484,"journal":{"name":"Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198)","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114167675","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Observation of emission decay from GaAs based 2D hole/post array structures 基于GaAs的二维孔/柱阵列结构的发射衰减观察
Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198) Pub Date : 2001-05-14 DOI: 10.1109/ICIPRM.2001.929139
M. Nakao, M. Naganuma, H. Masuda, M. Izutsu
{"title":"Observation of emission decay from GaAs based 2D hole/post array structures","authors":"M. Nakao, M. Naganuma, H. Masuda, M. Izutsu","doi":"10.1109/ICIPRM.2001.929139","DOIUrl":"https://doi.org/10.1109/ICIPRM.2001.929139","url":null,"abstract":"We have measured emission decays from 2D GaAs/AlGaAs multi-layered post/hole array structures using a decay measurement system by femtosecond-laser excitation. We have observed the fast emission decays of the 2D structures in the diagonal and lateral direction. Spectra observed in the lateral direction are shown to be stimulated emission based on the 2D photonic band gap structure.","PeriodicalId":403484,"journal":{"name":"Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198)","volume":"16 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115459883","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Growth of S-doped 2" InP-crystals by the vertical gradient freeze technique 垂直梯度冻结法生长s掺杂的2”inp晶体
Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198) Pub Date : 2001-05-14 DOI: 10.1109/ICIPRM.2001.929201
U. Sahr, I. Grant, G. Muller
{"title":"Growth of S-doped 2\" InP-crystals by the vertical gradient freeze technique","authors":"U. Sahr, I. Grant, G. Muller","doi":"10.1109/ICIPRM.2001.929201","DOIUrl":"https://doi.org/10.1109/ICIPRM.2001.929201","url":null,"abstract":"A VGF-furnace for the growth of high quality InP crystals was designed by the aid of numerical modelling with the software program CrysVUn++. In comparison to an earlier furnace set-up temperature fluctuations at the crucible wall could be reduced down to 0.03 K, S-doped crystals are grown and analysed by Hall-measurements and dislocation etching. The carrier concentration varies between 3-8/spl middot/10/sup 17/ cm/sup -3/ and a dislocation density (EPD) below 2000 cm/sup -2/ is reached.","PeriodicalId":403484,"journal":{"name":"Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198)","volume":"47 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123065089","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Bonding of p-Si/n-InP wafers through surface activated bonding method at room temperature 室温下表面活化键合p-Si/n-InP晶圆
Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198) Pub Date : 2001-05-14 DOI: 10.1109/ICIPRM.2001.929110
M. Howlader, T. Watanabe, T. Suga
{"title":"Bonding of p-Si/n-InP wafers through surface activated bonding method at room temperature","authors":"M. Howlader, T. Watanabe, T. Suga","doi":"10.1109/ICIPRM.2001.929110","DOIUrl":"https://doi.org/10.1109/ICIPRM.2001.929110","url":null,"abstract":"Bonding between p-Si and n-InP has successfully been performed through the surface activated bonding (SAB) method at room temperature. Consistent results between XPS and AFM investigations show that a weak phase of indium is generated on the InP. Due to this weak phase, the samples were debonded from the interface of In/InP, but not across the bonded interface of Si and In. Typical pn junction current-voltage behavior indicates no strong interface layer that can withstand the flow of current through the interface. Sputtering time dependent interface current is found. The beam energy of Ar-FAB is found to have a substantial effect on the interface current of p-Si/n-InP.","PeriodicalId":403484,"journal":{"name":"Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198)","volume":"45 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123160222","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Non-destructive characterization of heterointerfaces by depth-resolved cathodoluminescence and its application to InGaP/GaAs interface 深度分辨阴极发光技术无损表征异质界面及其在InGaP/GaAs界面中的应用
Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198) Pub Date : 2001-05-14 DOI: 10.1109/ICIPRM.2001.929203
F. Ishikawa, H. Hasegawa
{"title":"Non-destructive characterization of heterointerfaces by depth-resolved cathodoluminescence and its application to InGaP/GaAs interface","authors":"F. Ishikawa, H. Hasegawa","doi":"10.1109/ICIPRM.2001.929203","DOIUrl":"https://doi.org/10.1109/ICIPRM.2001.929203","url":null,"abstract":"A cathodoluminescence interface spectroscopy (CLIS) technique is proposed and applied to InGaP/GaAs multi-layer heterostructures as a contactless and non-destructive characterization method of buried multi-layer heterointerfaces. Plots of CL intensity vs. acceleration voltage are defined as CLIS spectra. A theoretical analysis of CLIS spectra was performed using the Everhart-Hoff electron energy loss curve. Experimentally, reference CLIS spectra were taken first on a well-characterized commercial high quality InGaP/GaAs wafer grown by MOVPE. Then the technique was applied to various InGaP/GaAs heterostructures and quantum wells grown on GaAs by GSMBE using TBP as the P source. Data on MOVPE grown HBT wafers are also presented and discussed.","PeriodicalId":403484,"journal":{"name":"Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198)","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123547215","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Stable and uniform InAlAs/InGaAs HEMT ICs for 40-Gbit/s optical communication systems 用于40gbit /s光通信系统的稳定、均匀的InAlAs/InGaAs HEMT集成电路
Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198) Pub Date : 2001-05-14 DOI: 10.1109/ICIPRM.2001.929230
T. Takahashi, M. Nihei, K. Makiyama, M. Nishi, T. Suzuki, N. Hara
{"title":"Stable and uniform InAlAs/InGaAs HEMT ICs for 40-Gbit/s optical communication systems","authors":"T. Takahashi, M. Nihei, K. Makiyama, M. Nishi, T. Suzuki, N. Hara","doi":"10.1109/ICIPRM.2001.929230","DOIUrl":"https://doi.org/10.1109/ICIPRM.2001.929230","url":null,"abstract":"We developed thermally stable InAlAs/InGaAs HEMTs which have uniform offset-voltage in differential amplifiers. The standard deviation of their offset-voltages is only 6.2 mV, and their threshold voltage changes by less than 11 mV when they are annealed for 60 minutes at 330/spl deg/C. These properties are essential for the operation of 40-Gbit/s optical communication circuits.","PeriodicalId":403484,"journal":{"name":"Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198)","volume":"118 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124500113","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 19
MOMBE growth and optical properties of Er-doped GaNP 掺铒GaNP的MOMBE生长及光学性质
Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198) Pub Date : 2001-05-14 DOI: 10.1109/ICIPRM.2001.929212
I. Suemune, T. Shimozawa, K. Uesugi, H. Kumano, T. Sekiguchi, H. Machida, N. Shimoyama
{"title":"MOMBE growth and optical properties of Er-doped GaNP","authors":"I. Suemune, T. Shimozawa, K. Uesugi, H. Kumano, T. Sekiguchi, H. Machida, N. Shimoyama","doi":"10.1109/ICIPRM.2001.929212","DOIUrl":"https://doi.org/10.1109/ICIPRM.2001.929212","url":null,"abstract":"Erbium (Er) doping in GaNP was studied with metalorganic molecular-beam epitaxy. Nitrogen (N) doping in GaP was possible up to 2% and exhibited large bandgap bowing consistent with previous reports. Er was doped in GaNP to study the codoping effect of Er and N. Er concentration was estimated to be above 0.2-0.8% depending on the Er kneudsen cell temperature. Er doping in GaNP showed up photoluminescence (PL) spectra similar to that of GaP in the visible region, but the PL sub-peaks similar to longitudinal-optical-phonon replica expected by the radiative recombinations in GaP exhibited much difference. Broad infra-red (IR) luminescence covering 1.1-1.6 /spl mu/m was observed and was substantially enhanced with the codoping of Er and N. No sharp Er emissions originating from inner-shell 4f-4f transitions were observed. Although the IR-PL was weak and easily saturated in undoped GaNP, it was linearly increased with the excitation level in the Er-doped GaNP.","PeriodicalId":403484,"journal":{"name":"Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198)","volume":"68 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121982608","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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