室温下表面活化键合p-Si/n-InP晶圆

Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198) Pub Date : 2001-05-14 DOI:10.1109/ICIPRM.2001.929110

M. Howlader, T. Watanabe, T. Suga

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引用次数: 5

摘要

在室温下，通过表面活化键合(SAB)方法成功地实现了p-Si和n-InP之间的键合。XPS和AFM研究的一致结果表明，InP上产生了弱相铟。由于这种弱相，样品从In/InP界面剥离，但没有穿过Si和In的键合界面。典型的pn结电流-电压行为表明，没有强大的界面层可以承受通过界面的电流。发现了与溅射时间有关的界面电流。发现Ar-FAB的束流能量对p-Si/n-InP的界面电流有很大的影响。

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Bonding of p-Si/n-InP wafers through surface activated bonding method at room temperature

Bonding between p-Si and n-InP has successfully been performed through the surface activated bonding (SAB) method at room temperature. Consistent results between XPS and AFM investigations show that a weak phase of indium is generated on the InP. Due to this weak phase, the samples were debonded from the interface of In/InP, but not across the bonded interface of Si and In. Typical pn junction current-voltage behavior indicates no strong interface layer that can withstand the flow of current through the interface. Sputtering time dependent interface current is found. The beam energy of Ar-FAB is found to have a substantial effect on the interface current of p-Si/n-InP.

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Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198)

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