基于GaAs的二维孔/柱阵列结构的发射衰减观察

Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198) Pub Date : 2001-05-14 DOI:10.1109/ICIPRM.2001.929139

M. Nakao, M. Naganuma, H. Masuda, M. Izutsu

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引用次数: 1

摘要

我们利用飞秒激光激发的衰减测量系统测量了二维GaAs/AlGaAs多层柱/孔阵列结构的发射衰减。我们观察到二维结构在对角线和横向上的快速发射衰减。在二维光子带隙结构的基础上，在横向观测到的光谱显示为受激发射。

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Observation of emission decay from GaAs based 2D hole/post array structures

We have measured emission decays from 2D GaAs/AlGaAs multi-layered post/hole array structures using a decay measurement system by femtosecond-laser excitation. We have observed the fast emission decays of the 2D structures in the diagonal and lateral direction. Spectra observed in the lateral direction are shown to be stimulated emission based on the 2D photonic band gap structure.

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Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198)

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