InAs/GaAs quantum dot lasers with InGaP cladding layer grown by solid-source molecular beam epitaxy

Abstract

This paper presents the lasing properties of InAs/GaAs quantum dot (QD) lasers with InGaP cladding layers grown by solid-source molecular beam epitaxy. These Al-free lasers exhibit a threshold current density of 138 A/cm/sup 2/, an internal loss of 1.35 cm/sup -1/ and an internal quantum efficiency of 31% at room temperature. At low temperature, a very high characteristic temperature of 425 K and very low threshold current density of 30 A/cm/sup 2/ are measured.