固体源分子束外延生长InGaP包层的InAs/GaAs量子点激光器

Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198) Pub Date : 2001-05-14 DOI:10.1109/ICIPRM.2001.929025

N. Yeh, W.-S. Liu, S. Chen, P. Chiu, J. Chyi

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引用次数: 0

摘要

本文研究了采用固体源分子束外延生长InGaP包层的InAs/GaAs量子点激光器的激光特性。这些无铝激光器在室温下的阈值电流密度为138 a /cm/sup 2/，内部损耗为1.35 cm/sup -1/，内部量子效率为31%。在低温下，测量到425 K的极高特征温度和30 a /cm/sup /的极低阈值电流密度。

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InAs/GaAs quantum dot lasers with InGaP cladding layer grown by solid-source molecular beam epitaxy

This paper presents the lasing properties of InAs/GaAs quantum dot (QD) lasers with InGaP cladding layers grown by solid-source molecular beam epitaxy. These Al-free lasers exhibit a threshold current density of 138 A/cm/sup 2/, an internal loss of 1.35 cm/sup -1/ and an internal quantum efficiency of 31% at room temperature. At low temperature, a very high characteristic temperature of 425 K and very low threshold current density of 30 A/cm/sup 2/ are measured.

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Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198)

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