Growth of S-doped 2" InP-crystals by the vertical gradient freeze technique

Abstract

A VGF-furnace for the growth of high quality InP crystals was designed by the aid of numerical modelling with the software program CrysVUn++. In comparison to an earlier furnace set-up temperature fluctuations at the crucible wall could be reduced down to 0.03 K, S-doped crystals are grown and analysed by Hall-measurements and dislocation etching. The carrier concentration varies between 3-8/spl middot/10/sup 17/ cm/sup -3/ and a dislocation density (EPD) below 2000 cm/sup -2/ is reached.