深度分辨阴极发光技术无损表征异质界面及其在InGaP/GaAs界面中的应用

Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198) Pub Date : 2001-05-14 DOI:10.1109/ICIPRM.2001.929203

F. Ishikawa, H. Hasegawa

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引用次数: 0

摘要

提出了一种阴极发光界面光谱(CLIS)技术，并将其应用于InGaP/GaAs多层异质结构中，作为一种非接触式、非破坏性的埋藏多层异质界面表征方法。CL强度与加速电压的关系图定义为CLIS谱。利用Everhart-Hoff电子能量损失曲线对CLIS光谱进行了理论分析。实验中，参考CLIS光谱首先在具有良好表征的由MOVPE生长的商用高质量InGaP/GaAs晶圆上获得。然后将该技术应用于各种InGaP/GaAs异质结构和以TBP为P源的GSMBE在GaAs上生长的量子阱。对MOVPE生长HBT晶圆的数据也进行了介绍和讨论。

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Non-destructive characterization of heterointerfaces by depth-resolved cathodoluminescence and its application to InGaP/GaAs interface

A cathodoluminescence interface spectroscopy (CLIS) technique is proposed and applied to InGaP/GaAs multi-layer heterostructures as a contactless and non-destructive characterization method of buried multi-layer heterointerfaces. Plots of CL intensity vs. acceleration voltage are defined as CLIS spectra. A theoretical analysis of CLIS spectra was performed using the Everhart-Hoff electron energy loss curve. Experimentally, reference CLIS spectra were taken first on a well-characterized commercial high quality InGaP/GaAs wafer grown by MOVPE. Then the technique was applied to various InGaP/GaAs heterostructures and quantum wells grown on GaAs by GSMBE using TBP as the P source. Data on MOVPE grown HBT wafers are also presented and discussed.

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Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198)

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