垂直梯度冻结法生长s掺杂的2”inp晶体

Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198) Pub Date : 2001-05-14 DOI:10.1109/ICIPRM.2001.929201

U. Sahr, I. Grant, G. Muller

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引用次数: 5

摘要

利用crysvun++软件进行数值模拟，设计了用于高质量InP晶体生长的vgf炉。与早期的熔炉设置相比，坩埚壁的温度波动可以降低到0.03 K, s掺杂晶体通过霍尔测量和位错蚀刻生长和分析。载流子浓度在3-8/spl /10/sup / 17/ cm/sup -3/之间变化，位错密度(EPD)低于2000 cm/sup -2/。

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Growth of S-doped 2" InP-crystals by the vertical gradient freeze technique

A VGF-furnace for the growth of high quality InP crystals was designed by the aid of numerical modelling with the software program CrysVUn++. In comparison to an earlier furnace set-up temperature fluctuations at the crucible wall could be reduced down to 0.03 K, S-doped crystals are grown and analysed by Hall-measurements and dislocation etching. The carrier concentration varies between 3-8/spl middot/10/sup 17/ cm/sup -3/ and a dislocation density (EPD) below 2000 cm/sup -2/ is reached.

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Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198)

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