用于40gbit /s光通信系统的稳定、均匀的InAlAs/InGaAs HEMT集成电路

Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198) Pub Date : 2001-05-14 DOI:10.1109/ICIPRM.2001.929230

T. Takahashi, M. Nihei, K. Makiyama, M. Nishi, T. Suzuki, N. Hara

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引用次数: 19

摘要

我们开发了在差分放大器中具有均匀偏置电压的热稳定InAlAs/InGaAs hemt。在330/spl度/C下退火60分钟后，其偏置电压的标准差仅为6.2 mV，阈值电压变化小于11 mV。这些特性对于40gbit /s光通信电路的运行是必不可少的。

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Stable and uniform InAlAs/InGaAs HEMT ICs for 40-Gbit/s optical communication systems

We developed thermally stable InAlAs/InGaAs HEMTs which have uniform offset-voltage in differential amplifiers. The standard deviation of their offset-voltages is only 6.2 mV, and their threshold voltage changes by less than 11 mV when they are annealed for 60 minutes at 330/spl deg/C. These properties are essential for the operation of 40-Gbit/s optical communication circuits.

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Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198)

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