金属有机气相选择性区域外延制备InGaAsP/InP马赫曾德尔干涉仪光放大器开关

Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198) Pub Date : 2001-05-14 DOI:10.1109/ICIPRM.2001.929218

N. Futakuchi, X. Song, D. Miyashita, Masaki Kato, Yoshiaki Nakano

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引用次数: 10

摘要

近年来，超高速光纤通信系统需要各种功能的光器件，如全光开关。我们使用单步MOVPE选择性面积生长和两种类型的图像化和蚀刻工艺制造了与半导体光放大器(SOAs)单片集成的InGaAsP/InP马赫-曾德尔干涉仪光开关。初步的光交换实验表明，在选择性面积生长的多量子阱soa中，载流子诱导的指数变化较大。此外，所有的光开关实验都成功地在这些器件上进行了演示。

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Fabrication of InGaAsP/InP Mach-Zehnder interferometer optical amplifier switches by metalorganic vapor phase selective area epitaxy

Recent ultra-fast optical-fiber communication systems require various functional optical components, such as all optical switches. We have fabricated InGaAsP/InP Mach-Zehnder interferometer optical switches monolithically integrated with semiconductor optical amplifiers (SOAs) using a single-step MOVPE selective area growth and two types of patterning and etching process. Preliminary optical switching experiment revealed large carrier-induced index change in the selective-area-grown multiple quantum well SOAs. Furthermore, all optical switching experiment has successfully been demonstrated in these fabricated devices.

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Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198)

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