在InP:Fe衬底上生长的高可靠性40gb /s电吸收调制器

Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198) Pub Date : 2001-05-14 DOI:10.1109/ICIPRM.2001.929165

K. Takagi, Y. Miyazaki, H. Tada, E. Ishimura, T. Aoyagi, T. Nishimura, I. Hatta, E. Omura

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引用次数: 2

摘要

在InP:Fe衬底上制备了具有高台脊波导的电吸收调制器，以减小电极垫的电容。截止频率为40 GHz，消光比为15 dB。初步的可靠性测试是在暗状态下进行的，在25/spl度/C下的估计寿命超过1.1/spl次/10/sup / 7/小时。

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Highly reliable 40 Gb/s electroabsorption modulator grown on InP:Fe substrate

The electroabsorption modulator with a high-mesa ridge waveguide has been fabricated on InP:Fe substrate to reduce the capacitance of electrode pads. The cut-off frequency was 40 GHz and the extinction ratio was 15 dB. The preliminary reliability test was carried out at dark state, and the estimated lifetime at 25/spl deg/C was over 1.1/spl times/10/sup 7/ hours.

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Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198)

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