大型半绝缘磷化铟衬底展望

Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198) Pub Date : 2001-05-14 DOI:10.1109/ICIPRM.2001.929033

W. Ware

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引用次数: 4

摘要

微波和毫米波器件越来越多地使用InP，需要保证提供高质量的3英寸和100毫米半绝缘基板。本文考虑了目前这种晶圆的可用性，原料情况以及不同工艺生长的晶圆的性能。它包括对钢锭退火的详细讨论以及它在材料均匀性和减少断裂方面提供的优势。通过V/sub / in /-H/sub 4/缺陷的再分布，提高了材料的电均匀性。随着产量的增加，质量的提高和价格的降低也应随之发生。

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Perspective for large semi-insulating indium phosphide substrates

The increasing use of InP for microwave and millimeter wave devices requires an assured supply of good quality 3 inch and 100 mm semi-insulating substrates. This paper considers the current availability of such wafers, the raw material situation and the properties of wafers grown by different processes. It includes a detailed discussion of ingot annealing and the advantages it offers in terms of material uniformity and reduced breakages. It is suggested that the improvement in electrical uniformity is obtained by the redistribution of the defect V/sub In/-H/sub 4/. Improvements in quality and reduction in price should occur as production volume increases.

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来源期刊

Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198)

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