Room temperature negative differential resistance with high peak-to-valley current ratio of CdF/sub 2//CaF/sub 2/ resonant tunneling diode on silicon

Abstract

We have demonstrated room temperature negative differential resistance with a high peak-to-valley ratio of nearly 10/sup 6/ using CdF/sub 2//CaF/sub 2/ double barrier resonant tunneling diode (DBRTD) structures grown on a Si(111) substrate. Fluctuation of layer thickness is evaluated at /spl plusmn/lTL (tri-layer=0.31 nm) for each layer. The I-V curves are reasonably dependent on the layer thickness of the CdF/sub 2/ quantum-well.