Progress on the OMVPE of GaInP Stranski-Krastanov islands on GaP/Si substrates

Abstract

Optical interconnects to the silicon chip could greatly increase data transmission rates and lower power consumption for off-chip communications. Our group is researching a method by which direct-bandgap GaInP Stranski-Krastanov islands with low defect densities could be monolithically integrated with silicon electronics using selective area organometallic vapor phase epitaxy (OMVPE). Recently, optical material was successfully deposited on GaP/Si substrates, and the photoluminescence results from GaInP/GaP/Si structures are presented for the first time. The nucleation of GaInP islands on GaP substrates and the luminescence quality of devices fabricated from this material system were also investigated. The performance of waveguide structures was measured and is described. During the testing of the GaInP/GaP samples, a degradation in luminescence intensity as a result of UV irradiation was observed. Photoluminescence spectra show a dramatic decrease in emission intensity as a function of exposure time.