氯化物气相外延生长GaAs衬底上InP外延膜的研究

Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198) Pub Date : 2001-05-14 DOI:10.1109/ICIPRM.2001.929118

S. Sawada, S. Matsukawa, T. Iwasaki, Y. Miura, M. Yokogawa

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引用次数: 0

摘要

采用氯化物气相外延(C-VPE)技术在GaAs衬底上生长了InP外延薄膜。获得了良好的表面形貌。对InP薄膜截面的TEM观察表明，在衬底与薄膜界面处产生的位错在InP层的顶表面逐渐消失。本报告展示了适用于高速器件(如hemt和HBTs)的InP外延生长的大直径、不易碎衬底的可能性。

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Investigation of InP epitaxial films on GaAs substrate grown by chloride vapor phase epitaxy

InP epitaxial films are grown on GaAs substrates by chloride vapor phase epitaxy (C-VPE). Good surface morphology is obtained. TEM observations of the cross-section of InP films show that dislocations generated at the interface between the substrate and the film gradually disappears towards the top surface of InP layers. This report demonstrates the possibility of large-diameter, less-fragile substrates suitable for InP epitaxial growth for high-speed devices such as HEMTs and HBTs.

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Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198)

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