Integration of complementary NPN and PNP InAlAs/InGaAs HBTs

Abstract

In this work, monolithic integration of NPN and PNP InAlAs/InGaAs complementary HBTs was demonstrated using a regrowth approach by MBE. The integrated HBTs showed little degradation over similar discrete devices. The DC gain was 35 for both integrated NPN and PNP HBTs. f/sub T/ of 79.6 GHz and f/sub max/ of 109 GHz were achieved for NPN devices while f/sub T/ of 11.6 GHz and f/sub max/ of 22.6 GHz were achieved for PNP devices.