气源MBE生长温度稳定波长的TlInGaAs/InP DH led

Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198) Pub Date : 2001-05-14 DOI:10.1109/ICIPRM.2001.929029

H. Lee, K. Konishi, O. Maeda, A. Mizobata, K. Asami, H. Asahi

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引用次数: 1

摘要

采用气源分子束外延技术在[100]InP衬底上生长TlInGaAs/InP双异质结构(DH)发光二极管(led)。Tl组成为6%。在1.58 /spl mu/m波长范围内工作至340 K。电致发光(EL)峰值能量(-0.09 meV/K)的温度变化非常小，与光致发光(PL)峰值能量的温度变化相似。

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Temperature stable wavelength TlInGaAs/InP DH LEDs grown by gas source MBE

TlInGaAs/InP double heterostructure (DH) light emitting diodes (LEDs) were grown on [100] InP substrates by gas source molecular beam epitaxy. The Tl composition was 6%. They were operated up to 340 K in the wavelength range of 1.58 /spl mu/m. Very small temperature variation in the electroluminescence (EL) peak energy (-0.09 meV/K) was observed, similar to the temperature variation of photoluminescence (PL) peak energy.

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Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198)

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